Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• an oxidizer in combination with about 0.05–0.2% by weight of an inhibitor in amounts effective to remove a copper material and a tungsten barrier material from the semiconductor substrate at about the same rate, the solution having a pH of about 3–7.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• effective amounts of an oxidizer and an inhibitor selected from the group consisting of benzotriazole, mercaptabenzothiazole, tolytriazole, methylamine, diethylamine, pyridine, quinoline, dicylohexamine nitrate, potassium silicate, ammonium borate, ammonium phosphate, and potassium dichromate, to remove a copper material and a tungsten barrier material from the semiconductor substrate at about the same rate, the solution having a pH of about 3–5.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• about 0.05–10% of an oxidizer and about 0.05–2% by weight of an inhibitor selected from the group consisting of benzotriazole, mercaptabenzothiazole, tolytriazole, methylamine, diethylamine, pyridine, quinoline, dicylohexamine nitrate, potassium silicate, ammonium borate, ammonium phosphate, and potassium dichromate, to remove a copper material and a tungsten barrier material from the semiconductor substrate at about the same rate;
• the solution having a pH of about 3–7.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• effective amounts of about 3–5% by weight of a dual oxidizer and about 0.05–0.2% by weight of an inhibitor to remove a copper material and a tungsten-containing barrier material from the semiconductor substrate at about the same rate, the dual oxidizer comprising a first oxidizer, and up to about 2% by weight of a second oxidizer selected from the group consisting of hydrogen peroxide and ammonium persulfate, the solution having a pH of about 3–7.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• an inhibitor, about 3–10% by weight of a first oxidizer and a second oxidizer including a minimal amount up to about 2% by weight of the second oxidizer selected from the group consisting of hydrogen peroxide and ammonium persulfate, to remove a copper material and a barrier material from the semiconductor substrate at about the same rate;
• the solution having a pH of about 3–7.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• effective amounts of about 3–10% by weight of an oxidizer and about 0.05–0.2% by weight of an inhibitor to remove a copper material and a barrier material comprising about 50% tungsten or greater from the semiconductor substrate at about the same rate, the solution having a pH of about 3–7.

A solution for CMP processing of a semiconductor substrate, the solution comprising:

• a mixture of about 3–10% by weight of an oxidizer, about 0.05–0.2% by weight of an inhibitor, and an abrasive;
• the oxidizer and inhibitor in amounts effective to remove a copper material and a tungsten barrier material from the semiconductor substrate at about the same rate, the solution having a pH of about 3 to about 7.

A solution for CMP processing of a semiconductor substrate comprising a tungsten barrier material and a copper material disposed thereon, the solution comprising:

• effective amounts of about 3–10% by weight of an oxidizer and about 0.05–0.2% by weight of an inhibitor to remove the tungsten barrier material at a slower rate than the copper material, the solution having a pH of about 3 to about 7.

A solution for CMP processing of a semiconductor substrate comprising a tungsten barrier material and a copper material disposed thereon, the solution comprising:

• a mixture of about 3–10% by weight of an oxidizer, about 0.05–0.2% by weight of an inhibitor, and an abrasive;
• the oxidizer and inhibitor in amounts effective to remove the tungsten barrier material at a slower rate than the copper material, the solution having a pH of about 3 to about 7.