Polishing liquid composition
AssigneeKao Corporation
InventorsYasuhiro Yoneda, Ryoichi Hashimoto
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Abstract
A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.
Claims12
A polishing liquid composition for polishing a surface to be polished comprising an insulating layer and a metal layer, the polishing liquid composition comprising a compound having six or more carbon atoms and a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water, wherein the compound having a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule is represented by the formula (I):
- R1—X—(CH2)q—[CH(OH)]n—CH2OH (I)
- wherein
- R1 is a hydrocarbon group having 1 to 12 carbon atoms;
- X is a group represented by
- (CH2)m, wherein m is 1,
- oxygen atom,
- sulfur atom,
- COO group,
- OCO group,
- a group represented by NR2 or
- O(R2O)P(O)O, wherein R2 is hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms;
- q is 0 or 1;
- and
- n is an integer of 1 to 4.
Dependencies are inferred from the claim text.