CMP apparatus and process sequence method

A chemical mechanical polishing apparatus for polishing a layer on a wafer to achieve a target polishing layer thickness, comprising:

• a base;
• a plurality of polishing heads disposed above said base for engaging the wafer and for sequentially transferring said wafer to a respective plurality of polishing stations in a sequential polishing process;
• said plurality of polishing stations comprising respective polishing pads or belts carried by said base, said polishing stations adjacently arranged for sequentially polishing the layer;
• a metrology tool carried by said base and disposed between a pair of adjacent polishing stations for measuring a thickness of the layer during said sequential polishing process;
• a controller operably connected to said plurality of polishing stations and said metrology tool, said controller operable to adjust polishing conditions comprising said polishing stations responsive to input from said metrology tool;
• and,
• wherein said controller is further operable to determine and control a remaining polishing time at one or more of said polishing stations comprising a remaining portion of said polishing sequence required to achieve said targeted polishing layer thickness.

A chemical mechanical polishing apparatus for sequentially polishing and measuring a thickness of a partially polished layer on a wafer to achieve a target polishing layer thickness, comprising:

• a plurality of polishing heads for engaging the wafer and for sequentially transferring said wafer to a respective plurality of polishing stations in a sequential polishing process;
• said plurality of polishing stations comprising respective polishing pads or belts, said polishing stations adjacently arranged for sequentially polishing the layer;
• a metrology tool carried disposed between a pair of adjacent polishing stations for measuring a thickness of the layer during said sequential polishing process;
• a controller operably connected to said plurality of polishing stations and said metrology tool, said controller operable to determine and control a remaining polishing time at one or more of said polishing stations comprising a remaining portion of said polishing sequence required to achieve said targeted polishing layer thickness in response to input from said metrology tool.