Method of depositing dielectric films
AssigneeApplied Materials, Inc.
InventorsSrinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Abstract
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
Claims20
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:
- positioning a substrate in a deposition chamber;
- providing a gas mixture to the deposition chamber, wherein the gas mixture comprises an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof;
- reacting the gas mixture in the presence of an electric field to form a doped silicon carbide layer on the substrate, wherein the doped silicon carbide layer has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- and then
- exposing the doped silicon carbide layer to a plasma by:
- providing one or more inert gases to a process chamber having the substrate therein with the doped silicon carbide layer formed thereon;
- and
- applying an electric field to the one or more inert gases to generate a plasma in the process chamber.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:
- positioning a substrate in a deposition chamber;
- providing a gas mixture to the deposition chamber, wherein the gas mixture comprises an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof;
- reacting the gas mixture in the presence of an electric field to form a doped silicon carbide layer on the substrate, wherein the doped silicon carbide layer has a compressibility that varies as a function of the amount of dopant in the gas mixture;
- and
- forming a silicon carbide cap layer on the doped silicon carbide layer.
A computer storage medium containing a software routine that, when executed, causes a general purpose computer to control a deposition chamber using a layer deposition method, comprising:
- providing a substrate having a metal layer thereon;
- forming a doped silicon carbide barrier layer on the metal layer, wherein the doped silicon carbide barrier layer is formed by reacting a gas mixture comprising an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof in the presence of an electric field;
- forming a first dielectric layer on the doped silicon carbide barrier layer;
- forming a doped silicon carbide hard mask on the first dielectric layer, wherein the doped silicon carbide hard mask is formed by reacting an organosilane compound and a dopant selected from the group of ammonia (NH3), methane (CH4), silane (SiH4), ethylene (C2H4), acetylene (C2H2), and combinations thereof in the presence of an electric field;
- patterning the doped silicon carbide hard mask to define vias therethrough;
- forming a second dielectric layer on the patterned doped silicon carbide hard mask;
- patterning the second dielectric layer to define interconnects therethrough, wherein the interconnects are positioned-over the vias defined in the doped silicon carbide hard mask;
- transferring the via pattern through the first dielectric layer using the doped silicon carbide hard mask as a mask;
- and
- filling the vias and interconnects with a conductive material.
Dependencies are inferred from the claim text.