US 7,116,753 B2Granted

Method for determination of elastic strains present in single-crystal wafers and device for its realization

AssigneeInstitute for Roentgen Optics

InventorsMuradin A. Kumakhov, Nariman S. Ibraimov, Alexander V. Lyuttsau, Svetlana V. Nikitina, Alexander V. Kotelkin, Alexander D. Zvonkov

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Abstract

Action on the tested wafer 1 is rendered with X-ray beam 3 converging in a point located inside the wafer or under it. Determination of relative position of the interference maxima is performed for diffraction reflections from crystallographic planes having the form of {nKK}, where n is equal to H, K or L and differs for distinct crystallographic planes. Means 11 for beam shaping creates beam 3 simultaneously acting on multiple crystallographic planes. Detectors 13 receive diffracted radiation in the whole angular range containing the interference maxima corresponding to the reflections from the irradiated planes.

Claims4

Dependent claims

Method for determination of elastic strain present in single-crystal wafers, in which a tested single-crystal wafer is illuminated with an X-ray beam, registration of an interference pattern of diffraction is performed, and relative position of interference maxima is determined and used to judge the presence of elastic strain, wherein:

the single-crystal wafer is illuminated with a converging X-ray beam having a point of ray intersection inside said single-crystal wafer or on a side opposite to that on which said converging X-ray beam falls, said converging X-ray beam has angular convergence sufficient for providing diffraction conditions simultaneously for multiple crystallographic planes;
and
the determination of relative position of the interference maxima is performed for diffraction reflections from crystallographic planes having different indices of the form of nKK, where n is equal to H, K, or L and differs for distinct crystallographic planes, by utilizing one or several position-sensitive X-ray detectors.

Dependencies are inferred from the claim text.