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US 7,116,692 B2Granted
Semiconductor laser and method of producing the same
AssigneeRohm Co., Ltd.
InventorsTakashi Kimura, Hisayoshi Kitajima
Life of this patent
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Abstract
A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer.
Claims18
A semiconductor laser device, comprising:
- an Alx1Ga(1-x1) As lower cladding layer,
- an active layer selected from the group of layers consisting of a single layer of Aly1Ga(1-y1) As, a composite layer of Aly11Ga(1-y11) As and Aly12Ga(1-y12) As, and a composite layer of Aly1Ga(1-y1)As and GaAs
- and an Alx2Ga (1-x2) As upper first cladding layer stacked on a GaAs compound semiconductor substrate;
- an Alx3Ga (1-x3) As ridge-shaped upper second cladding layer provided on the upper first cladding layer;
- a current blocking layer provided on both sides of the upper second cladding layer, wherein the current blocking layer is a single layer of Aly2Ga(1-y2) As or a composite layer including a lower layer of Aly3Ga(1-y3) As or a composite layer including a lower layer of Aly3Ga(1-y3) As disposed on the compound semiconductor substrate side and an upper layer of GaAs disposed on the contact layer side;
- a GaAs contact layer provided on the upper second cladding layer;
- and
- a current interrupting layer or layers formed of an insulating material and provided between the upper second cladding layer and the contact layer, in a vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in a longitudinal direction of the upper second cladding layer.
5 more elements
A semiconductor laser device comprising:
- a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate;
- a ridge-shaped upper second cladding layer provided on the upper first cladding layer;
- a current blocking layer provided on both sides of the upper second cladding layer;
- a contact layer provided on the upper second cladding layer;
- and
- a current interrupting layer or layers formed of an insulating material and provided between the upper second cladding layer and the contact layer, in a vicinity are both end faces of the device in a longitudinal direction of the upper second cladding layer,
- wherein
- the compound semiconductor substrate is a GaAs compound semiconductor substrate;
- the lower cladding layer is an Inx1(Gay1Al(1-y1))(1-x1)P layer;
- the active layer is a single layer of Inx2Ga(1-x2)P layer, a composite layer of Inx3Ga(1-x3)P and Inx4(Gay4Al(1-y4))(1-x4)P or a composite layer of Inx5(Gay5Al(1-y5))(1-x5)P and Inx6(Gay6Al(1-y6))(1-x6)P;
- the upper first cladding layer is an Inx7(Gay7Al(1-y7))(1-x7)P layer;
- the ridge shaped upper second cladding layer is an Inx8(Gay8Al(1-y8))(1-x8)P layer;
- the current blocking layer is a single layer of GaAs, Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx1Al(1-x11)P, or a composite layer including a lower layer of Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11Al(1-x11)P disposed on the compound semiconductor substrate side, and an upper layer of GaAs disposed on the contact layer side;
- and
- the contact layer is a GaAs layer.
12 more elements
A semiconductor laser device, comprising:
- a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order;
- a ridge-shaped upper second cladding layer provided on the upper first cladding layer;
- a current blocking layer provided on both sides of the upper second cladding layer;
- a contact layer provided on the upper second cladding layer;
- and
- a zinc diffusion source layer or layers including zinc and provided between the upper second cladding layer and the contact layer, in a vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in a longitudinal direction of the upper second cladding layer,
- wherein
- the compound semiconductor substrate is a GaAs compound semiconductor substrate,
- the lower cladding layer is an Alx1Ga(1-x1) As layer,
- the active layer is a single layer of Aly1Ga (1-y1) As or a composite layer of Aly11Ga (1-y11) As and Aly12Ga(1-y12) As, or a composite layer of Aly1Ga (1-y1) As and GaAs,
- the upper first cladding layer is an Alx2Ga (1-x2) As layer,
- the ridge-shaped upper second cladding layer is an Alx3Ga (1-x3) As layer,
- the current blocking layer is a single layer of Aly2Ga(1-y2) As, or a composite layer including a lower layer of Aly3Ga(1-y3) As disposed on the compound semiconductor substrate side and an upper layer of GaAs disposed on the contact layer side, and
- the contact layer is a GaAs layer.
11 more elements
A semiconductor laser device comprising:
- a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order;
- a ridge-shaped upper second cladding layer provided on the upper first cladding layer;
- a current blocking layer provided on both sides of the upper second cladding layer;
- a contact layer provided on the upper second cladding layer;
- and
- a zinc diffusion source layer or layers including zinc and provided between the upper second cladding layer and the contact layer, in a vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in a longitudinal direction of the upper second cladding layer,
- wherein
- the compound semiconductor substrate is a GaAs compound semiconductor substrate;
- the lower cladding layer is an Inx1(Gay1Al(1-y1))(1-x1)P layer;
- the active layer is a single layer of Inx2Ga(1-x2)P, a composite layer of Inx3Ga(1-x3)P and Inx4(Gay4Al(1-y4))(1-x4)P, or a composite layer of Inx5(Gay5Al(1-y5))(1-x5)P and Inx6(Gay6Al(1-y6))(1-x6)P;
- the upper first cladding layer is an Inx7(Gay7Al(1-y7))(1-x7)P layer;
- the ridge-shaped upper second cladding layer is an Inx8(Gay8Al(1-y8))(1-x8)P layer;
- the current blocking layer is a single layer of GaAs, Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11Al(1-x11)P, or a composite layer including a lower layer of Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11Al(1-x11)P disposed on the compound semiconductor substrate side and an upper layer of GaAs disposed on the contact layer side;
- and
- the contact layer is a GaAs layer.
12 more elements
A method of producing a semiconductor laser device, comprising:
- a step of stacking an Alx1Ga (1-x1) As lower cladding layer, an active layer, an Alx2Ga(1-x2) As upper first cladding layer and an Alx3Ga (1-x3) As upper second cladding layer on a GaAs compound semiconductor substrate in this order, wherein the active layer is selected from the group of layers consisting of a single layer of Aly1Ga(1-y1) As, a composite layer of Aly11Ga(1-y11) As and Aly12Ga(1-y12) As, and a composite layer of Aly1Ga(1-y1) As and GaAs;
- a step of forming a strip-shaped mask layer of an insulating material on the upper second cladding layer;
- a step of re-forming the upper second cladding layer into a ridge shape using the mask layer;
- a step of making a current blocking layer selectively grow on both sides of the ridge-shaped upper second cladding layer, wherein the current blocking layer is a single layer of Aly2Ga(1-y2) As or a composite layer including a lower layer of Aly3Ga(1-y3) As disposed on the compound semiconductor substrate side and an upper layer of GaAs disposed on the contact layer side;
- a step of removing the mask layer with at least a portion in a vicinity of one end thereof in a longitudinal direction of the mask layer being left;
- and
- a step of forming, on the upper second cladding layer, a GaAs contact layer which is in ohmic contact with the upper second cladding layer.
4 more elements
A method of producing a semiconductor laser device, comprising:
- a step of stacking an Inx1(Gay1Al(1-yl))(1-xl)P lower cladding layer, an active layer, an Alx2Ga(1-x2) As upper first cladding layer and an Alx3Ga (1-x3) As upper second cladding layer on a GaAs compound semiconductor substrate in this order, wherein the active layer is selected from the group of layers consisting of a single layer of Inx2Ga(1-x2)P, a composite layer of Inx3Ga(1-x3)P and Inx4 (Gay4Al(1-y4))(1-x4)P or a composite layer of Inx5(Gay5Al(1-y5))(1-x5)P and Inx6 (Gay6Al(1-y6))(1-x6)P;
- a step of forming a strip-shaped mask layer of an insulating material on the upper second cladding layer;
- a step of re-forming the upper second cladding layer into a ridge shape using the mask layer;
- a step of making a current blocking layer selectively grow on both sides of the ridge-shaped upper second cladding layer, wherein the current blocking layer is a single layer of GaAs, Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11 Al(1-x11)P, or a composite layer including a lower layer of Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11 Al(1-x11)P disposed on the compound semiconductor substrate side, and an upper layer of GaAs disposed on the contact layer side;
- a step of removing the mask layer with at least a portion in a vicinity of one end thereof in a longitudinal direction of the mask layer being left;
- and
- a step of forming, on the upper second cladding layer, a GaAs contact layer which is in ohmic contact with the upper second cladding layer.
4 more elements
A method of producing a semiconductor laser device, comprising:
- a step of stacking an Alx1Ga (1-x1) As lower cladding layer, an active layer, an Alx2Ga(1-x2) As upper first cladding layer and an Alx3Ga (1-x3) As upper second cladding layer on a GaAs compound semiconductor substrate in this order, wherein the active layer is selected from the group of layers consisting of a single layer of Aly1Ga(1-y1) As, a composite layer of Aly11Ga(1-y11) As and Aly12Ga(1-y12) As, and a composite layer of Aly1Ga(1-y1) As and GaAs;
- a step of forming a strip-shaped mask layer of an insulating material on the upper second cladding layer;
- providing zinc in the mask layer;
- a step of re-forming the upper second cladding layer into a ridge shape using the mask layer;
- a step of making a current blocking layer selectively grow on both sides of the ridge-shaped upper second cladding layer, wherein the current blocking layer is a single layer of Aly2Ga(1-y2) As or a composite layer including a lower layer of Aly3Ga(1-y3) As disposed on the compound semiconductor substrate side and an upper layer of GaAs disposed on the contact layer side;
- a step of removing the mask layer with at least a portion in a vicinity of one end thereof in a longitudinal direction of the mask layer being left, the portion left containing zinc so include a zinc diffusion source layer;
- and
- a step of forming, on the upper second cladding layer, a GaAs contact layer which is in ohmic contact with the upper second cladding layer.
5 more elements
A method of producing a semiconductor laser device, comprising:
- a step of stacking an Inx1(Gay1Al(1-yl))(1-xl)P lower cladding layer, an active layer, an Alx2Ga(1-x2) As upper first cladding layer and an Alx3Ga (1-x3) As upper second cladding layer on a GaAs compound semiconductor substrate in this order, wherein the active layer is selected from the group of layers consisting of a single layer of Inx2Ga(1-x2)P, a composite layer of Inx3Ga(1-x3)P and Inx4 (Gay4Al(1-y4))(1-x4)P or a composite layer of Inx5(Gay5Al(1-y5))(1-x5)P and Inx6 (Gay6Al(1-y6))(1-x6)P;
- a step of forming a strip-shaped mask layer of an insulating material on the upper second cladding layer;
- providing zinc in the mask layer;
- a step of re-forming the upper second cladding layer into a ridge shape using the mask layer;
- a step of making a current blocking layer selectively grow on both sides of the ridge-shaped upper second cladding layer, wherein the current blocking layer is a single layer of GaAs, Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11 Al(1-x11)P, or a composite layer including a lower layer of Gay9Al(1-y9)As, Inx10(Gay10Al(1-y10))(1-x10)P or Inx11 Al(1-x11)P disposed on the compound semiconductor substrate side, and an upper layer of GaAs disposed on the contact layer side;
- a step of removing the mask layer with at least a portion in a vicinity of one end thereof in a longitudinal direction of the mask layer being left;
- and
- a step of forming, on the upper second cladding layer, a GaAs contact layer which is in ohmic contact with the upper second cladding layer.
5 more elements
Dependencies are inferred from the claim text.