US 7,116,536 B2 · Electrostatic discharge protection circuit

Abstract

An ESD protection circuit includes a detection circuit for detecting an ESD current and a bypass circuit for bypassing the ESD. The detection circuit and bypass circuit are connected to a first pad and a second pad. The bypass circuit is connected to an output terminal of the detection circuit. The bypass circuit comprises a MOS transistor, a first bipolar transistor and a second bipolar transistor. The drain of the MOS transistor, the collectors of the first bipolar transistor and the collector of the second bipolar transistor are connected to the first pad. The source and the substrate of the MOS transistor and the emitter of the second bipolar transistor are connected to the second pad. The base of the first bipolar transistor is connected to the gate of the MOS transistor and the emitter of the first bipolar transistor is connected to the base of the second bipolar transistor.

Claims12

Dependent claims

An electrostatic discharge (ESD) protection circuit for bypassing an ESD current between a first pad and a second pad, comprising:

a detection circuit for detecting an ESD current, wherein the detection circuit is connected to the first pad and the second pad;
and
a bypass circuit for bypassing the ESD current, wherein the bypass circuit is connected to the first pad, the second pad and the output terminal of the detection circuit, the bypass circuit comprises an N-type metal-oxide-semiconductor (NMOS) transistor, a first NPN bipolar transistor and a second NPN bipolar transistor, wherein a drain of the NMOS transistor, a collector of the first NPN bipolar transistor and a collector of the second NPN bipolar transistor are connected to the first pad, and a source and a substrate of the NMOS transistor and an emitter of the second NPN bipolar transistor are connected to the second pad, a base of the first NPN bipolar transistor is connected to a gate of the NMOS transistor and an emitter of the first NPN bipolar transistor is connected a base of the second NPN bipolar transistor.

An electrostatic discharge (ESD) protection circuit for bypassing an ESD current between a first pad and a second pad, comprising:

a detection circuit for detecting the ESD current, wherein the detection circuit connects with the first pad and the second pad;
and
a bypass circuit for bypassing the ESD current, wherein the bypass circuit is connected to the first pad, the second pad and the output terminal of the detection circuit, the bypass circuit comprises a P-type metal-oxide-semiconductor (PMOS) transistor, a first PNP bipolar transistor and a second PNP bipolar transistor, wherein a source and a substrate of the PMOS transistor and an emitter of the second PNP bipolar transistor are connected to the first pad, a drain of the PMOS transistor, a collector of the first PNP bipolar transistor and a collector of the second PNP bipolar transistor are connected to the second pad, and a base of the first PNP bipolar transistor is connected to a gate of the PMOS transistor, and an emitter of the first PNP bipolar transistor is connected to a base of the second PNP bipolar transistor.

Dependencies are inferred from the claim text.

Electrostatic discharge protection circuit

Life of this patent

Electrostatic discharge protection circuit

Life of this patent

Abstract

Claims12