Magnetoresistive element having current-perpendicular-to-the-plane structure and having improved magnetic domain control

A current-perpendicular-to-the-plane structure magnetoresistive element comprising:

• an electrically-conductive free magnetic layer;
• an electrically-conductive pinned magnetic layer;
• an electrically-conductive non-magnetic intermediate layer interposed between said free and pinned magnetic layers;
• a primary electrode layer made of an electrically-conductive material;
• a smaller electrode layer made of an electrically-conductive material and interposed between said free magnetic layer and said primary electrode layer;
• a domain controlling film made of a magnetic material and disposed adjacent to said smaller electrode layer, said domain controlling film contacting said free magnetic layer and said smaller electrode layer;
• and
• an insulating layer disposed between said domain controlling film and said primary electrode layer.

A current-perpendicular-to-the-plane structure magnetoresistive element comprising:

• an electrically-conductive free magnetic layer;
• an electrically-conductive pinned magnetic layer;
• an electrically-conductive non-magnetic intermediate layer interposed between said free and pinned magnetic layers;
• a first electrode layer made of an electrically-conductive material;
• a second electrode layer made of an electrically-conductive material and interposed between said free magnetic layer and said first electrode layer;
• and
• a domain controlling film made of an insulating magnetic material and disposed adjacent to said second electrode layer, and between said free magnetic layer and said first electrode layer,
• wherein a surface of said second electrode layer contacts a surface of said first electrode layer and has a surface area smaller than a surface area of said first electrode layer.