Method for manufacturing a panel of TFT LCD having particular TFT structure above pixel electrode

A method for manufacturing a panel of a thin film transistor liquid crystal display device, which has a thin film transistor area and a pixel electrode area within every pixel area defined by a plurality of data signal lines and scanning signal lines, comprising following steps:

• (a) providing a transparent substrate;
• (b) forming a transparent conductive layer, a first insulating layer, and a second metal layer on the transparent substrate in sequence;
• (c) forming a source area and a drain area in the second metal layer within every thin film transistor area, forming a transparent electrode area in the transparent conductive layer within every pixel electrode area, and forming the data signal lines in the second metal layer at two peripheral sides of every pixel area through a halftone photolithography and an etching;
• (d) forming a semiconducting layer and a second insulating layer on the transparent substrate in sequence;
• (e) forming a semiconducting channel area in the semiconducting layer within the thin film transistor area, and forming a plurality of contacts on the source area, the drain area, and the data signal lines through a photolithography and an etching;
• (f) forming a third metal layer and a third insulating layer on the transparent substrate in sequence;
• and
• (g) forming the scanning signal lines, a plurality of gate lines connected with the scanning signal lines, a plurality of first connecting lines between the source area and the data signal lines, and a plurality of second connecting lines between the drain area and the pixel electrode area through a photolithography and an etching.