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US 7,116,366 B1Granted
CMOS aps pixel sensor dynamic range increase
AssigneeMicron Technology, Inc.
InventorsVladimir Berezin, Alexander Krymski
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Abstract
An image sensing device, such as a CMOS Active Pixel Sensor device, including an array of pixels. Each pixel has a photoreceptor, a follower transistor connected to the photoreceptor, a select transistor connected to the follower transistor, and a reset transistor. A first bias line provides power to at least a first of the transistors for a first pixel, and a second bias line provides power to at least a second of the transistors of said first pixel different than the first transistor of the first pixel.
Claims18
An image sensor, comprising:
- a plurality of pixels, each pixel having a photoreceptor therein, a follower transistor connected to said photoreceptor, a select transistor connected to said follower transistor, and a reset transistor which controls applying a reset level;
- a first bias line providing power to at least a first of said transistors for a first pixel, and a second bias line providing power to at least a second of said transistors of said first pixel different than said first transistor of said first pixel, such that said first and said second transistors are separately powered by separate bias lines, wherein said first bias line further provides power to a said second transistor of a second pixel, and said second bias line further provides power to a said first transistor of a third pixel, and wherein a gate of said reset transistor of the first pixel is connected to a first reset/select line, and a gate of said select transistor of a different pixel is connected to said first reset/select line.
An active pixel sensor, comprising:
- a plurality of pixels formed of transistors which are compatible with CMOS techniques, each pixel associated with accepting a pixel of an image, and each pixel comprising:
- a photoreceptor therein,
- an in-pixel follower transistor connected to said photoreceptor,
- an in pixel select transistor connected to said follower transistor,
- and an in pixel reset transistor which controls applying a reset level;
- a first bias line providing power to at least one of said transistors for a first pixel;
- a second bias line providing power to another of said transistors different than said one of said transistors of said first pixel, and
- a third bias line providing power to a third of said transistors different than said one or another of said transistors of said first pixel, such that said one, said another, and said third transistors are separately powered by separate bias lines;
- wherein said second bias line is connected commonly to a first plurality of follower transistors in a first row of said pixels and a second plurality of reset transistors in a second row of pixels different than said first row of pixels.
6 more elements
An image sensor comprising:
- a first pixel, said first pixel comprising a first photoreceptor, a first follower transistor having a gate connected to said first photoreceptor, a drain of said first follower transistor connected to a first line, and a first reset transistor, a drain of said first reset transistor connected to a second line, and a gate of said reset transistor connected to a third line;
- a second pixel, said second pixel comprising a second photoreceptor, a second follower transistor having a gate connected to said second photoreceptor, a drain of said second follower transistor connected to said second line, and a second reset transistor, a drain of said second reset transistor connected to a fourth line, and a gate of said second reset transistor connected to a fifth line.
Dependencies are inferred from the claim text.