Active matrix display device
AssigneesHitachi, Ltd., Hitachi Device Engineering Co., Ltd.
InventorsToshio Miyazawa, Iwao Takemoto, Atsushi Hasegawa, Masashiro Maki, Kazutaka Goto
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Abstract
A display device includes a dynamic ratioless shift register which is operated in a stable manner and can expand the degree of freedom of design. In the dynamic ratioless shift register which is provided with thin film transistors having semiconductor layers made of p-Si on a substrate surface, a node which becomes the floating state is connected to a fixed potential through a capacitance element.
Claims3
A display device being provided with a display driving circuit including a dynamic shift register which includes a first MISTFT on a substrate surface, wherein:
- the dynamic shift register is comprised of a second MISTFT and a third MISTFT which use polycrystalline silicon as a semiconductor layer:
- the first MISTFT includes a gate electrode, a first electrode and a second electrode, wherein a voltage of the gate electrode is boosted by a voltage of the first electrode changing from low level to high level,
- the second MISTFT is connected between a ground level line and the gate electrode of the first MISTFT, and
- the third MISTFT is comprised such that the gate electrode of the first MISTFT is dropped to a ground level during a period other than a period in which a signal of high level is transmitted into the gate electrode of the first MISTFT.
Dependencies are inferred from the claim text.