Bandgap reference circuit for ultra-low current applications

A bandgap reference circuit for use in a low-current application, said bandgap reference circuit comprising:

• a junction device configured for generating a negative temperature coefficient;
• and an FET-based transistor device configured for generating a positive temperature coefficient, said positive temperature coefficient being configured to balance out said negative temperature coefficient generated from said junction device, wherein said bandgap reference circuit comprises a threshold voltage elimination device configured for cancellation of a threshold voltage component within said FET-based transistor device, wherein said junction device comprises a bipolar device, wherein said FET-based transistor device is configured for receiving a first bias current, and said threshold voltage component comprises a second FET-based transistor device configured for receiving a second bias current and having a gate-source connection coupled directly to a gate-drain connection of said first FET-based transistor device, and said bipolar device is configured for receiving a third bias current and having a base terminal coupled to said gate-source connection of said second FET-based transistor device to facilitate a minimization of a supply voltage requirement.

An amplifier circuit configured with a bandgap reference circuit for generating a bandgap voltage, said bandgap reference circuit comprising:

• a junction device configured for generating a negative temperature coefficient;
• and an FET-based transistor device configured for generating a positive temperature coefficient, said positive temperature coefficient being configured to sum with said negative temperature coefficient to provide an aproximately zero temperature coefficient in said bandgap voltage, wherein said bandgap reference circuit further comprises a threshold voltage elimination device configured for cancellation of a threshold voltage component within said FET-based transistor device.

A bandgap reference circuit for use in an integrated circuit application, said bandgap reference circuit comprising:

• a negative temperature coefficient generating device;
• and a positive temperature coefficient generating device, said positive temperature coefficient generating device configured for zeroing out a temperature coefficient in said bandgap reference circuit wherein said positive temperature coefficient generating device comprises a gate-drain connected transistor device, wherein said bandgap reference circuit further comprises a gate-source connected transistor device configured for subtracting out a threshold voltage component within said gate-drain connected transistor device.

An integrated circuit comprising a bandgap reference circuit for providing a reference voltage, said bandgap reference circuit comprising:

• a junction transistor device configured for generating a negative temperature coefficient;
• and an FET-based transistor device configured for generating a positive temperature coefficient, said positive temperature coefficient being configured to balance out said negative temperature coefficient, wherein said FET-based transistor device is configured for receiving a first bias current, and said bandgap reference circuit further comprises a threshold voltage elimination device comprising a second FET-based transistor device configured for receiving a second bias current, said second FET-based transistor device configured with said first FET-based transistor device to provide said positive temperature coefficient.