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US 7,116,042 B2Granted
Flow-fill structures
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
Estimating the term…
Abstract
A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display.
Claims20
A multi-layer device comprising:
- a first device layer;
- a second device layer;
- and at least one structure in the form of a spacer between said first and second device layers, wherein the multi-layer device is produced by the process comprising the steps of:
- providing a substrate for the device;
- depositing a layer of photoresist on the substrate;
- forming openings in the layer of photoresist that expose portions of the substrate;
- and
- depositing a precursor in a substantially liquid form in the openings of the photoresist to form at least one layer of fixed geometry, wherein said step of depositing a precursor comprises the substep of depositing a sol-gel precursor using chemical vapor deposition.
5 more elements
A processor system comprising:
- a processor;
- and a flat panel display, wherein said flat panel display comprises:
- a cathode;
- an anode;
- and at least one homogenous amorphous spacer between said cathode and said anode, wherein the flat panel display is produced by the process comprising the steps of:
- depositing a first layer of photoresist on the anode;
- depositing a patterned second layer of photoresist on the first layer of photoresist, the second layer covering selected portions of the first layer of photoresist;
- providing a light source to expose the second layer of photoresist and portions of the first layer of photoresist not covered by the second layer of photoresist so as to form openings in the first layer that expose portions of the anode;
- depositing using chemical vapor deposition a wet film of sol-gel precursor made of silicon dioxide (SiO2) on a top surface of the first layer of photoresist and in the openings in the first layer;
- baking the precursor so as to form spacers in the form of SiO2-filled columns in the openings in the first layer of photoresist;
- planarizing the precursor to remove the precursor on the first layer of photoresist while leaving the precursor filled in the openings in the first layer;
- stripping the first layer of photoresist leaving the SiO2-filled columns as spacers on the anode;
- and
- assembling the flat panel display with the cathode and the anode separated by the spacers.
11 more elements
Dependencies are inferred from the claim text.