Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
AssigneeIntel Corporation
InventorsLi-Peng Wang, Oing Ma, Valluri Rao
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Abstract
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
Claims23
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer of non conductive material;
- and
- a layer of piezoelectric material contacting the seed layer of non-conductive material, wherein the opening extends through the substrate and the seed layer.
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer of non conductive material;
- and
- a layer of piezoelectric material contacting the seed layer of non-conductive material, wherein the seed layer also has an opening therein that corresponds to the opening in the substrate, the opening in the seed layer including a layer of conductive material.
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer;
- and
- a layer of piezoelectric material contacting the seed layer of non-conductive material, wherein the opening extends through the substrate and through at least a portion of the seed layer.
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer;
- and
- a layer of piezoelectric material contacting the seed layer of non-conductive material, wherein the seed layer also has an opening therein that corresponds to the opening in the substrate, the opening in the seed layer including a portion of conductive material.
Dependencies are inferred from the claim text.