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US 7,115,996 B2Granted
Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Sung Kwon Kang, Maurice McGlashan-Powell, Eugene J. O'Sullivan, George F. Walker
Life of this patent
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Abstract
A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.
Claims9
A copper composite material comprising:
- a copper structure;
- and
- a metal coating disposed on a surface of the copper structure, wherein the metal coating comprises a metal oxide, the metal oxide comprising tin or indium, and the copper composite material has a copper oxidation resistance from 12 mΩ/sq. to 20 mΩ/sq.
A copper terminal of a back-end-of-the-line (BEOL) comprising:
- a copper BEOL terminal pad;
- a metal coating disposed on a surface of a copper structure, wherein the metal coating comprises tin;
- and
- a gold coating disposed on the metal coating.
1 more element
Dependencies are inferred from the claim text.