Reinforced bond pad for a semiconductor device

A reinforced bond pad configuration formed on a semiconductor device, said configuration comprising

• a first outer positioned passivation layer formed on the device comprising at least one opening formed therein having a periphery;
• at least two metal layers formed on the device subjacent to the first outer positioned passivation layer wherein the at least one opening formed exposes a top surface of a top metal layer thereby forming a metal pad;
• a first insulating layer interposed between the at least two metal layers;
• a plurality of metal features formed within the insulating layer between the at least two metal layers of the device, a portion of which are disposed within a cross-sectional area of the device defined by said opening periphery so as to reinforce said metal pad;
• a bond pad formed over and in contact with said metal pad, said bond pad comprising a probe region and a wire bond region, wherein said wire bond region substantially covers said metal pad;
• and
• a second passivation layer formed over said bond pad, wherein a separating region is formed from said second passivation layer and on top of said bond pad such that said separating region separates said probe region and said wire bond region.