Silicon oxycarbide and silicon carbonitride based materials for MOS devices
AssigneeTaiwan Semiconductor Manfacturing Company, Ltd.
InventorsZhen-Cheng Wu, Hung Chun Tsai, Da-Wen Lin, Weng Chang, Shwang-Ming Cheng, Mong Song Liang
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Abstract
In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewalls of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material. The source and drain are then formed. A contact etch stop (CES) layer is formed on the source/drain regions and the spacers. The CES layer is preferably formed of SiCO based material or SiCN based material. An Inter-Level Dielectric (ILD) is then formed on the CES layer.
Claims19
An integrated circuit device comprising:
- a substrate baying a surface;
- a gate dielectric formed on the surface of the substrate;
- a gate electrode Conned on the gate dielectric;
- a pair of spacers formed along opposite sidewalls of the gate electrode and the gate dielectric;
- source and drain regions formed on opposite sides of the gate electrode;
- a contact etch stop (CES) layer blanket formed on the source and drain regions and the spacers wherein the CES layer is formed of a material selected from the group consisting essentially of a silicon oxycarbide (SiCO) based material and a silicon carbonitride (SiCN) based material;
- an inter-level dielectric (ILD) formed on the CES layer;
- and
- a conductive plug formed in the inter-level dielectric.
An integrated circuit device comprising:
- a gate dielectric on a surface of a substrate;
- a gate electrode an the gate dielectric;
- a spacer along a sidewall of the gate electrode and the gate dielectric;
- a source/drain region adjacent the spacer;
- a contact etch stop (CES) layer over the source/drain region and the spacer wherein the CES layer comprises a material selected from the group consisting essentially of a silicon oxycarbide (SiCO) based material and a silicon carbonitride (SiCN) based material;
- an inter-level dielectric (ILD) on the CES layer;
- and
- a contact plug in the inter-level dielectric.
Dependencies are inferred from the claim text.