Semiconductor device including stress inducing films formed over n-channel and p-channel field effect transistors and a method of manufacturing the same

A semiconductor device comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on said one main surface of the semiconductor substrate, which second region is different from the first region, wherein films for generating a tensile stress in the channel region of the n channel conductivity type field effect transistor and a compressive stress in the channel region of the p channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof, wherein the film covering the gate electrode of the p channel conductivity type field effect transistor is formed by plasma CVD, and wherein the film covering the gate electrode of the n channel conductivity type field effect transistor is formed by thermal CVD.

A semiconductor device comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on said one main surface of the semiconductor substrate, which second region is different from the first region, wherein films for generating a stress which makes an interatomic distance of silicon in the channel formation region of the n channel conductivity type field effect transistor wider than an interatomic distance of silicon in the channel formation region of the p channel conductivity type field effect transistor are formed by plasma CVD over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof.

A semiconductor comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the one main surface of the semiconductor substrate which region is different from the first region,

• wherein a film for generating a tensile stress in the channel formation region of the n channel conductivity type field effect transistor is formed over a gate electrode of the n channel conductivity type field effect transistor to cover the gate electrode thereof, while a film for generating a compressive stress in the channel formation region of the p channel conductivity type field effect transistor is formed over a gate electrode of the p channel conductivity type field effect transistor to cover the gate electrode thereof.

A semiconductor device comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the one main surface of the semiconductor substrate which region is different from the first region,

• wherein films for generating a stress generated in the channel formation region of the p channel conductivity type field effect transistor greater than a compressive stress generated in the channel formation region of the n channel conductivity type field effect transistor are formed over the n channel and p channel conductivity field effect transistors respectively to cover gate electrodes thereof.

A semiconductor device comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on the one main surface of the semiconductor substrate which region is different from the first region,

• wherein films for generating a stress to make a tensile stress generated in the channel formation region of the n channel conductivity type field effect transistor greater than a tensile stress generated in the channel formation region of the p channel type field effect transistor are formed over the n channel and p channel conductivity field effect transistors respectively to cover gate electrodes thereof.

A semiconductor device comprising an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on said one main surface of the semiconductor substrate, which second region is different from the first region, wherein the semiconductor device further comprises at least either one of a film which is formed over a gate electrode of the n channel conductivity type field effect transistor to cover the gate electrode thereof and generates a tensile stress in the channel formation region of the n channel conductivity type field effect transistor, or a film which is formed over a gate electrode of the p channel conductivity type field effect transistor to cover the gate electrode thereof and generates a compressive stress in the channel formation region of the p channel conductivity type field effect transistor.

A method of manufacture of a semiconductor device having an n channel conductivity type field effect transistor having a channel formation region formed in a first region on one main surface of a semiconductor substrate and a p channel conductivity type field effect transistor having a channel formation region formed in a second region on said one main surface of the semiconductor substrate, which second region is different from the first region, the method comprising a step of forming at least either one of a film which is formed over a gate electrode of the n channel conductivity type field effect transistor to cover the gate electrode thereof and generates a tensile stress in the channel formation region of the n channel conductivity type field effect transistor or a film which is formed over a gate electrode of the p channel conductivity type field effect transistor to cover the gate electrode thereof and generates a compressive stress in the channel formation region of the p channel conductivity type field effect transistor.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein films for generating a stress to make an interatomic distance of silicon in the channel formation region of the n channel conductivity type field effect transistor greater than an interatomic distance of silicon in the channel formation region of the p channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors to cover gate electrodes thereof.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein films for generating a stress to make an interatomic distance of silicon in the channel formation region of the n channel conductivity type field effect transistor greater than an interatomic distance of silicon in the channel formation region of the p channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof, and
• wherein the films are each formed of an insulating film for self align contact.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein a film for generating a stress to make a residual stress in the direction of flow of a drain current in the channel formation region of the n channel conductivity type field effect transistor to a tensile stress is formed over a gate electrode of the n channel conductivity type field effect transistor to cover the gate electrode thereof, and
• wherein the film for generating a stress to make a residual stress in the direction of flow of a drain current in a channel formation region of the p channel conductivity type field effect transistor to a compressive stress is formed over a gate electrode of the p channel conductivity type field effect transistor to cover the gate electrode thereof.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein films for generating a stress which makes a compressive stress in the direction of flow of a drain current in a channel formation region of the p channel conductivity type field effect transistor greater than a compressive stress in the direction of flow of a drain current in a channel formation region of the n channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein films for generating a stress to make a tensile stress in the direction of flow of a drain current in a channel formation region of the n channel conductivity type field effect transistor greater than a tensile stress in the direction of flow of a drain current in a channel formation region of the p channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein films for generating a stress to make an interatomic distance of silicon in the direction of flow of a drain current in a channel formation region of the n channel conductivity type field effect transistor greater than an interatomic distance of silicon in the direction of flow of a drain current in a channel formation region of the p channel conductivity type field effect transistor are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof.

A semiconductor device having an n channel conductivity type field effect transistor and a p channel conductivity type field effect transistor, each formed over a semiconductor substrate,

• wherein insulating films for self align contact are formed over the n channel and p channel conductivity type field effect transistors respectively to cover gate electrodes thereof, and
• wherein the insulating films for self align contact generate a stress to make an interatomic distance of silicon in the direction of flow of a drain current in the channel formation region of the n channel conductivity type field effect transistor greater than an interatomic distance of silicon in the direction of flow of a drain current in the channel formation region of the p channel conductivity type field effect transistor.