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US 7,115,953 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo Shimizu, Takeshi Yamaguchi, Yukie Nishikawa
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Abstract
A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
Claims18
A semiconductor device comprising:
- a semiconductor substrate containing Si as a main component;
- and
- an active element formed on the semiconductor substrate and including an insulating metal suicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
A semiconductor device comprising:
- a semiconductor substrate containing Si as a main component;
- an active element formed above the semiconductor substrate;
- and
- an insulating metal silicide thin film formed between the semiconductor substrate and the active element, so as to terminate dangling bonds of Si of the semiconductor substrate, the film including MSi whose element ratio of metal M to Si is 1:1,
- wherein the metal M is quadrivalent and includes at least one element selected from the group consisting of Ti, Zr, Hf, Ce, Mo, W, Ru, Os, and Ir.
2 more elements
Dependencies are inferred from the claim text.