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US 7,115,925 B2Granted
Image sensor and pixel having an optimized floating diffusion
AssigneeOmniVision Technologies, Inc.
InventorHoward E. Rhodes
Life of this patent
Estimating the term…
Abstract
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the floating diffusion. The floating diffusion is formed from an n-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2. Finally, an amplification transistor is controlled by the floating diffusion.
Claims10
An active pixel comprising:
- a photosensitive element formed in a semiconductor substrate;
- a transfer transistor formed between said photosensitive element and a floating diffusion and selectively operative to transfer a signal from said photosensitive element to said floating diffusion, wherein said floating diffusion is formed from an n-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2;
- and
- an amplification transistor controlled by said floating diffusion;
- wherein said n-type implant is a dual implant of arsenic and phosphorous that grades the floating diffusion.
2 more elements
An active pixel comprising:
- a photosensitive element formed in a semiconductor substrate;
- a transfer transistor formed between said photosensitive element and a floating diffusion and selectively operative to transfer a signal from said photosensitive element to said floating diffusion, wherein said floating diffusion is formed from an n-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2;
- and
- an amplification transistor controlled by said floating diffusion, wherein said amplification transistor outputs an amplified version of said signal to a column bitline.
1 more element
An active pixel comprising:
- a photosensitive element formed in a semiconductor substrate;
- a transfer transistor formed between said photosensitive element and a floating diffusion and selectively operative to transfer a signal from said photosensitive element to said floating diffusion, wherein said floating diffusion is formed from an p-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2;
- and
- an amplification transistor controlled by said floating diffusion;
- wherein said n-type implant is a dual implant of indium and boron that grades the floating diffusion.
2 more elements
An active pixel comprising:
- a photosensitive element formed in a semiconductor substrate:
- a transfer transistor formed between said photosensitive element and a floating diffusion and selectively operative to transfer a signal from said photosensitive element to said floating diffusion, wherein said floating diffusion is formed from an p-type implant with a dosage in the range of 5e13 to 5e14 ions/cm2;
- and
- an amplification transistor controlled by said floating diffusion, wherein said amplification transistor outputs an amplified version of said signal to a column bitline.
1 more element
Dependencies are inferred from the claim text.