Imaging with gate controlled charge storage
AssigneeMicron Technology, Inc.
InventorSungkwon C. Hong
Life of this patent
Estimating the term…
Abstract
A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.
Claims5
A pixel cell comprising:
- a photo-conversion device that generates charge;
- a gate controlled charge storage region that stores the charge under control of a control gate,
- a first transistor having its gate between the photo-conversion device and the charge storage region for transferring charge from the photo-conversion device to the charge storage region;
- a sensing node;
- and
- a second transistor having its gate between the charge storage region and the sensing node.
A pixel cell comprising:
- a photo-conversion device that generates charge;
- a gate controlled charge storage region that stores the charge under control of a control gate, wherein the charge storage region comprises a doped region of a second conductivity type and a doped surface layer of a first conductivity type over and in contact with the doped region of a second conductivity type, and wherein the control gate is over the doped surface layer;
- a first transistor having its gate between the photo-conversion device and the charge storage region for transferring charge from the photo-conversion device to the charge storage region;
- a sensing node;
- and
- a second transistor having its gate between the charge storage region and the sensing node.
Dependencies are inferred from the claim text.