Light-emitting diode

A light-emitting diode, comprising:

• a supporting substrate;
• a metal substrate, wherein a thickness of the metal substrate is between about 30 μm and 150 μm;
• an adhesion layer located between the supporting substrate and metal substrate;
• a reflective layer located on the metal substrate;
• a first transparent conductive layer located on the reflective layer;
• an illuminant epitaxial structure located on the first transparent conductive layer, wherein the iluminant epitaxial structure comprises a p-type semiconductor layer, an active layer and an n-type semiconductor layer stacked in sequence, and the active layer and the n-type semiconductor layer are located on a portion of the p-type semiconductor layer;
• a second transparent conductive layer located on the n-type semiconductor layer of the illuminant epitaxial structure;
• a first electrode located on a portion of the second transparent conductive layer;
• and
• a second electrode located on another portion of the p-type semiconductor layer.