Nitride semiconductor light-emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJae Hoon Lee, Yong Chun Kim, Je Won Kim
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Abstract
A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.
Claims16
A nitride semiconductor light-emitting device, comprising:
- a first conductive nitride semiconductor layer;
- an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated;
- and
- a second conductive nitride semiconductor layer formed on the active layer,
- wherein
- at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration that ranges from 0.2 to 0.6%.
A nitride semiconductor light-emitting device, comprising:
- a first conductive nitride semiconductor layer;
- an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated;
- and
- a second conductive nitride semiconductor layer formed on the active layer,
- wherein
- at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%;
- the quantum barrier layer is composed of material having the formula of Inx1Ga1−x1N, where x1 is a number between 0 and 1;
- and
- the quantum well layer is composed of material having the formula of Inx2Ga1−x2N, where x2 is a number between 0 and 1, and having an energy band gap smaller than that of the quantum barrier layer.
A nitride semiconductor light-emitting device, comprising:
- a first conductive nitride semiconductor layer;
- an active layer formed on the first conductive nitride semiconductor layer;
- and
- a second conductive nitride semiconductor layer formed on the active layer,
- wherein
- said active layer comprises at least one quantum well layer and at least one quantum barrier layer laminated with said at least one quantum well layer;
- and
- at least one of the quantum well layer and quantum barrier layer in the active layer is doped with Al and contains Al dopants in a concentration of higher than 0% and less than 1%.
Dependencies are inferred from the claim text.