III-nitride light emitting device with reduced polarization fields
AssigneePhilips Lumileds Lighting Company, LLC
InventorsSatoshi Watanabe, Stephen A. Stockman
Life of this patent
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Abstract
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m2. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.
Claims41
A semiconductor light emitting device comprising:
- first and second spacer layers;
- and
- a light emitting layer sandwiched between the first and second spacer layers;
- wherein a difference between a net polarization in at least one of the spacer layers and a net polarization in the light emitting layer is less than a difference between a net polarization in GaN and the net polarization in the light emitting layer, and a difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than 0.02 C/m2.
A semiconductor light emitting device comprising:
- first and second spacer layers;
- and
- an active region sandwiched between the first and second spacer layers, the active region comprising a first quantum well, a second quantum well, and a barrier layer disposed between the first quantum well and the second quantum well;
- wherein a difference between a net polarization in the barrier layer and a net polarization in at least one of the quantum wells is less than a difference between a net polarization in GaN and the net polarization in at least one of the quantum wells, and a difference between the net polarization in the barrier layer and the net polarization in at least one of the quantum wells is less than 0.02 C/m2.
Dependencies are inferred from the claim text.