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US 7,115,907 B2Granted
Radiation-emitting semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsJohannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Andreas Ploessl, Wilhelm Stein
Life of this patent
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Abstract
A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.
Claims16
A radiation-emitting semiconductor component, having
- a layer structure (12) which includes at least one photon-emitting active zone (16) arranged between a cladding layer (14) that is n-conductively doped and a cladding layer (18) that is p-conductively doped,
- an n-type contact connected to the cladding layer (14) that is n-conductively doped, and
- a mirror layer (20) arranged on the side, facing away from the active zone (16), of the cladding layer (18) that is p-conductively doped,
- wherein
- the mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Os, Ir, Cu, Ti, Ta and Cr.
2 more elements
Dependencies are inferred from the claim text.