Semiconductor device and semiconductor device producing system

A semiconductor device comprising:

• an insulating film comprising at least one of silicon nitride, silicon nitride oxide, silicon oxide and silicon oxide nitride and having a rectangle shape depression;
• and
• a crystalline semiconductor film having source and drain regions and a channel forming region between the source and drain regions,
• wherein the channel forming region is formed on a bottom of the depression of the insulating film, and
• wherein the channel forming region extends in a longitudinal direction of the rectangle shape depression.

A semiconductor device comprising:

• a thin film transistor in which a plurality of channel forming regions are provided in parallel in a crystalline semiconductor film,
• wherein the plurality of channel forming regions are formed on a bottom of each of a plurality of rectangle shape depressions of a primary insulating film, respectively,
• wherein each of the channel forming regions extends in a longitudinal direction of the rectangle shape depressions and connects to the plurality of channel forming regions, and
• wherein a source or drain region is formed in a crystalline semiconductor film formed continuously with the crystalline semiconductor film.

A semiconductor device comprising:

• a thin film transistor in which a plurality of channel forming regions are provided in parallel in a crystalline semiconductor film,
• wherein the plurality of channel forming regions are formed on a bottom of each of a plurality of rectangle shape depressions of a primary insulating film, respectively,
• wherein each of the channel forming regions extends in a longitudinal direction of the rectangle shape depressions and connects to the plurality of channel forming regions, and
• wherein a source or drain region is formed in a crystalline semiconductor film formed continuously with the crystalline semiconductor film and extending from the bottom of the rectangle shape depression to a top of a rectangle shape projection.

A semiconductor device comprising:

• a thin film transistor in which a plurality of channel forming regions are provided in parallel in a crystalline semiconductor film,
• wherein the plurality of channel forming regions are formed on a bottom of each of a plurality of noncyclic rectangle shape depressions of a primary insulating film, respectively,
• wherein each of the channel forming regions extends in a longitudinal direction of the rectangle shape depression and connects to the plurality of channel forming regions, and
• wherein a source or drain region is formed in a crystalline semiconductor film formed continuously with the crystalline semiconductor film and extending from the bottom of the rectangle shape depression to a top of a rectangle shape projection.

A semiconductor device comprising:

• a plurality of first gate electrodes each having rectangular or stripe;
• a first gate insulating film covering the plurality of first gate electrodes and having depressions and projections on the surface;
• a crystalline semiconductor film having a channel forming region of each of the depressions of the first gate insulating film;
• a second gate insulating film formed on the crystalline semiconductor film and being in contact with the projections of the first gate insulating film;
• and
• a second gate electrode formed on the second gate insulating film and being in contact with the plurality of first gate electrodes through contact holes in the first and second gate insulating films,
• wherein the channel forming region overlaps with any two of the plurality of first gate electrodes through the first gate insulating film and overlaps with the second gate electrode through the second gate insulating film.

A semiconductor device comprising:

• a primary insulating film having a rectangle shape depression formed over a substrate;
• and
• a thin film transistor having a crystalline semiconductor film formed over the primary insulating film,
• wherein a channel forming region in the crystalline semiconductor film is formed on a bottom of the depression of the primary insulating film, and
• wherein the channel forming region extends in a longitudinal direction of the rectangle shape depression.