Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same

A semiconductor apparatus, comprising:

• a substrate having a substrate surface;
• a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of said substrate surface, said second ends having aromatic regions;
• and
• a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions, said polycrystalline semiconductor layer being on said first region of said substrate, in which said organic semiconductor molecules comprise a non-aromatic substituent.

A method of making a semiconductor apparatus, comprising the steps of:

• providing a substrate having a substrate surface;
• providing a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of said substrate surface, said second ends having aromatic regions comprising at least y minus 2 conjugated ni-electrons, in which v is an integer of 10 or more;
• and
• providing a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions comprising y conjugated pi-electrons, said polycrystalline semiconductor layer being on said first region of said substrate.

An integrated circuit, comprising:

• a substrate having a substrate surface;
• a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of said substrate surface, said second ends having aromatic regions comprising at least y minus 2 coniugated pi-electrons, in which y is an integer of 10 or more;
• a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions comprising y coniugated pi-electrons, said polycrystalline semiconductor layer being on said first region of said substrate;
• a gate electrode;
• a source electrode;
• and
• a drain electrode;
• said source and drain electrodes being in contact with a channel portion of said polycrystalline semiconductor layer on said first region, said gate electrode being positioned to control a conductivity of said channel portion.

A method of making an integrated circuit, comprising the steps of:

• providing a substrate having a substrate surface;
• providing a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of said substrate surface, said second ends having aromatic regions comprising at least y minus 2 coniugated ni-electrons, in which y is an integer of 10 or more;
• providing a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions comprising y coniugated pi-electrons, said polycrystalline semiconductor layer being on said first region of said substrate;
• providing a gate electrode;
• providing a source electrode;
• providing a drain electrode;
• and
• placing said source and drain electrodes in contact with a channel portion of said polycrystalline semiconductor layer on said first region, said gate electrode being positioned to control a conductivity of said channel portion.