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US 7,115,897 B2Granted
Semiconductor circuit configuration and semiconductor memory device
AssigneeInfineon Technologies AG
InventorsGünter Schmid, Marcus Halik, Hagen Klauk, Christine Dehm, Thomas Haneder, Thomas Mikolajick
Life of this patent
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Abstract
A semiconductor circuit configuration has at least one pair of complementary operating field-effect transistors in which each transistor has a gate region, first and second source/drain regions and also a channel region with or made of an organic semiconductor material that is provided in between. It is furthermore provided that the gate regions are formed such that they are electrically coupled to one another via a capacitor configuration.
Claims57
A semiconductor circuit configuration, comprising:
- a capacitor configuration;
- and
- at least one pair of complementary or complementary acting field-effect transistor devices;
- each of said complementary field-effect transistor devices having a gate region, a first source/drain region, a second source/drain region, and a channel region including or made of an organic semiconductor material configured between said first source/drain region and said second source/drain region;
- and
- said capacitor configuration electrically coupling said gate region of one of said complementary field-effect transistor devices to said gate region of another one of said complementary field-effect transistor devices.
3 more elements
A semiconductor memory device, comprising:
- a plurality of semiconductor circuit configurations each including a capacitor configuration and at least one pair of complementary or complementary acting field-effect transistor devices;
- each of said complementary field-effect transistor devices having a gate region, a first source/drain region, a second source/drain region, and a channel region including or made of an organic semiconductor material configured between said first source/drain region and said second source/drain region;
- and
- said capacitor configuration of each respective one of said plurality of said semiconductor circuit configurations electrically coupling said gate region of one of said complementary field-effect transistor devices of said respective one of said plurality of said semiconductor circuit configurations to said gate region of another one of said complementary field-effect transistor devices of said respective one of said plurality of said semiconductor circuit configurations.
1 more element
Dependencies are inferred from the claim text.