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US 7,115,865 B2Granted
Method of applying micro-protection in defect analysis
AssigneePowerchip Semiconductor Corp.
InventorsChing-Pin Chang, Ching-Ching Shih, Ting-Wei Chen
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Abstract
The present invention discloses a method of applying micro-protection in defect analysis. The method includes providing a substrate having at least one defect thereon, forming the micro-protection on the surface of the defect, confirming the site of the defect, and forming a specimen of the defect by utilizing a focused ion beam microscope.
Claims19
A method of defect analysis comprising:
- providing a substrate, the substrate includes at least a defect thereon;
- utilizing at least one microscope for observing the substrate;
- creating a reference mark in proximity to the defect;
- forming a micro-protection on the surface of the defect;
- confirming the site of the defect;
- and
- utilizing a focused ion beam (FIB) microscope to form a specimen of the defect.
4 more elements
A method of defect analysis comprising:
- providing a substrate, wherein the substrate includes at least a defect thereon;
- creating at least one reference mark in proximity to the defect;
- forming a micro-protection on the surface of the defect;
- utilizing a focused ion beam (FIB) microscope to search the reference mark for confirming the site of the defect;
- and
- forming a specimen of the defect by utilizing the focused ion beam microscope.
3 more elements
Dependencies are inferred from the claim text.