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US 7,115,533 B2Granted
Semiconductor device manufacturing method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShigenori Hayashi, Kazuhiko Yamamoto
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Abstract
The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.
Claims29
A semiconductor device manufacturing method comprising:
- a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere,
- wherein the first step includes a step of maintaining the temperature of the substrate at not less than 0° C. and not more than 300° C.;
- and
- a distance between the substrate and the metal oxide film is 1.7 nm or less after the second step.
3 more elements
A semiconductor device manufacturing method comprising:
- a first step of forming a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a gate insulating film by oxidizing the metal film in an oxidizing atmosphere,
- wherein a thickness of the metal film is substantially equivalent to a range of implantation of the oxygen ions.
1 more element
A semiconductor device manufacturing method comprising:
- a first step of forming a metal film on a substrate in a non-oxidizing atmosphere;
- a second step of forming a gate insulating film by oxidizing the metal film in an oxidizing atmosphere;
- and
- a third step of heating the substrate having the gate insulating film in an inert gas or under a vacuum.
1 more element
A semiconductor device manufacturing method comprising:
- a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere,
- wherein a thickness of an interface layer formed between the substrate and the metal oxide film is 1.7 nm or less, after the second step.
1 more element
A semiconductor device manufacturing method comprising:
- a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere,
- wherein a thickness of an interface layer formed between the substrate and the metal oxide film is smaller than a thickness of the metal oxide film, after the second step.
1 more element
A semiconductor device manufacturing method comprising:
- a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere,
- wherein in the second step, the oxidizing atmosphere includes oxygen that has been excited by light.
1 more element
A semiconductor device manufacturing method comprising:
- a first step of depositing a metal film on a substrate in a non-oxidizing atmosphere;
- and
- a second step of forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere,
- wherein in the second step, an ion implantation system, an ion source or a plasma generating system is used.
1 more element
Dependencies are inferred from the claim text.