Methods of forming patterned photoresist layers over semiconductor substrates
AssigneeMicron Technolgoy, Inc.
InventorJon P. Daley
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Abstract
This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has an outer surface. The outer surface is treated with a basic fluid. A positive photoresist is applied onto the outer surface which has been treated with the basic treating fluid. The positive photoresist is patterned and developed effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface. Other aspects and implementations are contemplated.
Claims75
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate having an outer surface;
- the outer surface comprising at least one of a silicon oxide-containing material, an organic-containing material, a silicon nitride-containing material, or a silicon carbide-containing material;
- treating the outer surface with a basic fluid comprising at least one of tetramethyl ammonium hydroxide and ammonium fluoride;
- applying photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the photoresist to form a patterned photoresist layer having laterally projecting feet proximate the semiconductor substrate outer surface.
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate having an outer surface;
- treating the outer surface with a basic fluid, the basic treating fluid being at room ambient temperature and room ambient pressure during the treating;
- applying photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the photoresist to form a patterned photoresist layer.
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate having an outer surface;
- the outer surface comprising at least one of a silicon oxide-containing material, an organic-containing material, a silicon nitride-containing material, or a silicon carbide-containing material;
- treating the outer surface with a basic fluid comprising at least one of tetramethyl ammonium hydroxide and ammonium fluoride;
- applying a positive photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the positive photoresist effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface.
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate having an outer surface;
- treating the outer surface with a basic fluid, the basic treating fluid being at room ambient temperature and room ambient pressure during the treating;
- applying a positive photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the positive photoresist effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface.
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- depositing an antireflective coating over the semiconductor substrate,
- the antireflective coating having an outer surface;
- the outer surface comprising at least one of a silicon oxide-containing material, an organic-containing material, a silicon nitride-containing material, or a silicon carbide-containing material;
- treating the outer surface with a basic fluid comprising at least one of tetramethyl ammonium hydroxide and ammonium fluoride;
- applying a positive photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the positive photoresist effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface.
A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- depositing an antireflective coating over the semiconductor substrate,
- the antireflective coating having an outer surface;
- treating the outer surface with a basic fluid, the basic treating fluid being at room ambient temperature and room ambient pressure during the treating;
- applying a positive photoresist onto the outer surface which has been treated with the basic treating fluid;
- and
- patterning and developing the positive photoresist effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface.
Dependencies are inferred from the claim text.