Top surface roughness reduction of high-k dielectric materials using plasma based processes
AssigneeTexas Instruments Incorporated
InventorsManuel A. Quevedo-Lopez, James J. Chambers, Luigi Colombo, Mark R. Visokay
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Abstract
A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.
Claims24
A method for manufacturing a semiconductor device, comprising:
- depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide;
- subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer;
- and
- annealing the dielectric layer before subjecting the dielectric layer to the plasma.
A method for manufacturing a semiconductor device, comprising:
- depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide;
- subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer;
- and
- annealing the dielectric layer after subjecting the dielectric layer to the plasma.
A method for manufacturing a semiconductor device, comprising:
- depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide;
- subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer, wherein the dielectric layer comprises a hafnium aluminum oxide.
A method for manufacturing a semiconductor device, comprising:
- depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide;
- subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer, wherein the dielectric layer comprises a ternary transition metal oxide from the group of ZrHfO, TaTiO, ZrTiO, HfNbO, HfVO, ZrVO, TaNbO, TaVO, TaNbO, HfTiO, and HfTaO.
A method for manufacturing a semiconductor device, comprising:
- depositing a dielectric layer on a substrate, the dielectric layer having a dielectric constant greater than the dielectric constant of silicon dioxide;
- subjecting the dielectric layer to a plasma, the plasma operable to reduce top surface roughness in the dielectric layer, wherein the plasma is a nitrogen plasma, the nitrogen plasma further operable to incorporate nitrogen into the dielectric layer.
Dependencies are inferred from the claim text.