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US 7,115,528 B2Granted
Systems and method for forming silicon oxide layers
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Timothy A. Quick
Life of this patent
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Abstract
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Claims56
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor compound consisting of the formula Si(NR1R2)xZy, wherein:
- R1and R2, are each independently hydrogen, or an organic group;
- Z is CI or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- providing at least one source of ozone;
- and
- contacting the at least one precursor compound and the at least one source of ozone to form a silicon oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using an atomic layer deposition process that includes a plurality of deposition cycles.
7 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly within a deposition chamber;
- providing a vapor comprising a precursor compound consisting of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- providing a vapor comprising at least one source of ozone;
- and
- contacting the at least one precursor compound and the at least one source of ozone to form a silicon oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly within the deposition chamber using an atomic layer deposition process that includes a plurality of deposition cycles.
7 more elements
A method of forming a silicon oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing a precursor compound consisting of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- providing at least one source of ozone;
- and
- contacting the precursor compounds and the at least one source of ozone to form a silicon oxide layer on one or more surfaces of the substrate using an atomic layer deposition process that includes a plurality of deposition cycles.
7 more elements
A method of forming a silicon oxide layer on a substrate, the method comprising:
- providing a substrate within a deposition chamber;
- providing a vapor comprising a precursor compound consisting of the formula Si(NR1R2)xZy, wherein:
- R1 and R2 are each independently hydrogen or an organic group;
- Z is Cl or H;
- x is 1 to 4;
- and
- y is 0 to 4;
- providing a vapor comprising at least one source of ozone;
- and
- contacting the at least one precursor compound and the at least one source of ozone to form a silicon oxide layer on one or more surfaces of the substrate within the deposition chamber using an atomic layer deposition process that includes a plurality of deposition cycles.
7 more elements
Dependencies are inferred from the claim text.