Method for manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Infineon Technologies AG
InventorsKazuhiro Tomioka, Haoren Zhuang
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Abstract
A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma. The cleaning includes heating the substrate to a first temperature, introducing gas, which contains chlorine and nitrogen and in which a ratio of chlorine atoms to nitrogen atoms is 9:1 to 5:5, and applying high-frequency power to an electrode, on which the substrate is placed.
Claims18
A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum, the method comprising:
- etching the conductive layer;
- and
- generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma,
- wherein said cleaning includes:
- heating the substrate to a first temperature;
- introducing gas, which contains chlorine and nitrogen and in which a ratio of chlorine atoms to nitrogen atoms is 5:5 to 9:1;
- and
- applying high-frequency power to an electrode, on which the substrate is placed, the high-frequency power relative to a unit area of the electrode being at most 0.02 W/cm2.
A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum, the method comprising:
- etching the conductive layer;
- and
- generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma,
- wherein said cleaning includes:
- heating the substrate to a first temperature;
- introducing third gas, which contains first gas containing chlorine and second gas containing nitrogen and in which a ratio in volume of the first gas to the second gas is 5:5 to 9:1;
- and
- applying high-frequency power to an electrode, on which the substrate is placed, the high-frequency power relative to a unit area of the electrode being at most 0.02 W/cm2.
Dependencies are inferred from the claim text.