Epitaxial semiconductor deposition methods and structures
AssigneeASM America, Inc.
InventorsPaul D. Brabant, Joseph P. Italiano, Chantal J. Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer
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Abstract
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
Claims18
A process for forming a strained semiconductor layer over a substrate, the process comprising:
- forming an epitaxial Ge-containing layer on a substrate, wherein the epitaxial Ge-containing layer has a germanium content in the range of about 50 atomic percent to about 100 atomic percent;
- and
- depositing a strained epitaxial semiconductor layer over the epitaxial Ge-containing layer by chemical vapor deposition using a deposition gas comprising trisilane.
A process for forming a strained semiconductor layer over a substrate, the process comprising:
- providing a single crystal Si substrate in a single-wafer, horizontal gas flow reactor;
- depositing an epitaxial Ge-containing layer on the single crystal Si substrate;
- and
- depositing a strained epitaxial semiconductor layer onto the epitaxial Ge-containing layer by chemical vapor deposition using a deposition gas comprising trisilane, wherein the substrate is maintained at a temperature between about 325° C. and about 475° C. during deposition of the strained epitaxial semiconductor layer.
A method comprising:
- providing a substrate in a reaction chamber, wherein an epitaxial germanium-containing layer is provided on the substrate;
- and
- depositing a strained epitaxial semiconductor layer over the germanium-containing layer by chemical vapor deposition using a deposition gas comprising trisilane, wherein the strained epitaxial semiconductor layer is deposited at a deposition rate between about 5 Å min−1 and about 50 Å min−1, and at a temperature between about 325° C. and about 475° C.
Dependencies are inferred from the claim text.