Methods for forming capacitor structures

A method for forming a capacitor structure comprising:

• providing a substrate comprising an insulative layer over a semiconductive layer, the insulative layer having a recess therein, the recess having a periphery comprising a bottom and sidewalls, wherein the bottom comprises an upper surface of the semiconductive layer;
• forming a first conductive-material-comprising layer over the substrate, the first conductive-material-comprising layer lining the bottom and the sidewalls to partially fill the recess and extending laterally outward from the recess over an upper surface of the substrate;
• filling the partially filled recess with an organic material, the filling forming an organic material layer over an upper surface of the first conductive-material-comprising layer;
• removing at least a portion of the organic material with a pad and an organic-material-removing fluid, wherein the organic-material-removing fluid is substantially unreactive with the first conductive-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing;
• stopping the removing when substantially all of an upper surface of the laterally extending first conductive-material-comprising layer is exposed;
• forming a dielectric layer over the first conductive-material-comprising layer;
• and
• forming a second conductive-material-comprising layer over the dielectric layer.