Cyclical deposition of tungsten nitride for metal oxide gate electrode
AssigneeApplied Materials, Inc.
InventorsShulin Wang, Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li
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Abstract
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.
Claims23
A method for forming a tungsten layer on a substrate, comprising:
- depositing a tungsten nitride barrier layer on a substrate by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound into a process chamber;
- and
- depositing a tungsten-containing layer on the tungsten nitride barrier layer by alternately exposing the substrate to a second tungsten-containing compound and a reductant.
A method for forming a tungsten layer on a substrate, comprising:
- depositing a tungsten nitride barrier layer on a substrate by alternately pulsing a first tungsten-containing compound and a nitrogen-containing compound into a process chamber;
- and
- depositing a tungsten-containing layer on the tungsten nitride barrier layer.
A method for forming a tungsten layer on a substrate, comprising:
- exposing a substrate to a reducing compound during a soak process;
- depositing a tungsten nitride barrier layer on the substrate by alternately pulsing a tungsten-containing compound and a nitrogen-containing compound into a process chamber;
- and
- depositing a tungsten-containing layer on the tungsten nitride barrier layer.
A method for forming a tungsten layer on a substrata, comprising:
- positioning a substrate within a process chamber;
- exposing the substrate to a reducing compound during a soak process;
- exposing the substrate sequentially to a tungsten-containing compound and a nitrogen-containing compound to form a tungsten nitride barrier layer during a cyclic layer deposition process;
- and
- exposing the substrate to the tungsten-containing compound and a reductant to deposit a tungsten-containing layer on the tungsten nitride barrier layer, wherein the reductant is selected from the group consisting of silane, diborane, derivatives thereof, and combinations thereof.
Dependencies are inferred from the claim text.