Methods of making projected contact structures for engaging bumped semiconductor devices

A method for creating at least one projection body for engaging outer surfaces of conductive bumps without substantially deforming the outer surfaces of the conductive bumps, the method comprising:

• forming at least one masking block on a substrate blank;
• subjecting the substrate blank to an oxidizing atmosphere to form at least one projection body thereon;
• forming a second mask over the at least one projection body;
• forming a third mask over the at least one projection body, the third mask being shorter and narrower than the at least one masking block and the second mask;
• refining the at least one projection body;
• and
• etching the substrate blank to sharpen the point of the at least one projection body.

A method for creating at least one projection body for engaging outer surfaces of conductive bumps without substantially deforming the outer surfaces of the conductive bumps, the method comprising:

• forming at least one masking block on a substrate blank;
• subjecting the substrate blank to an oxidizing atmosphere to form at least one projection body thereon;
• forming a second mask over the at least one projection body;
• and
• refining the at least one projection body by isotropically etching with a mixture of HF, HNO3 H2O such that the at least one projection body has arcuate and concave sidewalls;
• and
• controlling a radius of arc of the sidewalls by varying etch parameters.