Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process

A process for fabrication of a semiconductor device, the device including a two-bit EEPROM device including an ONO structure, comprising forming the ONO structure by:

• providing a semiconductor substrate having a silicon surface;
• forming a tunnel oxide layer overlying the silicon surface;
• depositing a silicon nitride layer overlying the tunnel oxide layer;
• and
• forming a top oxide layer overlying the silicon nitride layer by in-situ steam generation oxidation of a portion of the silicon nitride layer at an absolute pressure in the range from about 50 to about 500 torr.

A process for fabrication of a semiconductor device, the device including a floating gate FLASH memory device comprising an ONO structure, comprising forming the ONO structure by:

• providing a semiconductor substrate having a floating gate electrode;
• forming a bottom oxide layer overlying the floating gate electrode;
• depositing a silicon nitride layer overlying the tunnel oxide layer;
• and
• forming a top oxide layer overlying the silicon nitride layer by in-situ steam generation oxidation of a portion of the silicon nitride layer at an absolute pressure in the range from about 50 to about 500 torr.