Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorsRolf Stephan, Manfred Horstmann, Karsten Wieczorek
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Abstract
In a method for fabricating a semiconductor device different types of a metal-semiconductor compound are formed on or in at least two different conductive semiconductor regions so that for each semiconductor region the metal-semiconductor compound region may be formed to obtain an optimum overall performance of the semiconductor device. On one of the two semiconductor regions, the metal-semiconductor compound is formed of at least two different metal layers, whereas the metal-semiconductor compound in or on the other semiconductor region is formed from a single metal layer.
Claims19
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having formed thereon at least one first transistor and at least one second transistor, each of said first and second transistors being comprised of a gate electrode and a plurality of source/drain regions;
- depositing a first metal layer on the at least one first and second transistors;
- forming a mask layer above the first metal layer wherein the first metal layer above the at least one second transistor is exposed;
- removing the first metal layer from above the at least one second transistor;
- performing at least one heat treating process on the first metal layer to form a first metal silicide compound on the gate electrode and the source/drain regions of the at least one first transistor;
- depositing a second metal layer over the at least one first and second transistors;
- and
- performing at least one heat treating process on the second metal layer to form a second metal silicide compound on at least one of the gate electrode and the source/drain regions of the at least one second transistor.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having formed thereon at least one first transistor and at least one second transistor, each of said transistors being comprised of a gate electrode and a plurality of source/drain regions;
- depositing a first metal layer on the at least one first and second transistors;
- selectively removing the first metal layer from above the at least one second transistor;
- depositing a second metal layer on the at least one first and second transistors;
- and
- performing at least one heat treating process to form a first metal silicide compound on at least one of the gate electrode and the plurality of source/drain regions of said first transistor and a second metal silicide compound on at least one of the gate electrode and the source/drain regions of said second transistor.
Dependencies are inferred from the claim text.