Method for crystallizing semiconductor with laser beams

A method of crystallizing a semiconductor, comprising the steps of:

• dividing a laser beam emitted by a laser source into a plurality of sub-beams;
• and
• selectively irradiating the sub-beams onto an amorphous semiconductor on a substrate to crystallize the semiconductor;
• wherein laser beams emitted by a plurality of different laser sources inducing the sub-beams are simultaneously irradiated onto the semiconductor, and a difference between diverging angles of the plurality of laser beams from different laser sources are corrected,
• wherein an interval of a plurality of laser spots of sub-beams formed on the substrate is an integral multiple of unit elements to be formed in the semiconductor.

A method of crystallizing a semiconductor, comprising the steps of:

• dividing a laser beam emitted by a continuous wave laser source into a plurality of sub-beams;
• and
• selectively irradiating the sub-beams onto an amorphous semiconductor on a substrate to crystallize the semiconductor;
• wherein laser beams emitted by a plurality of laser sources inducing the sub-beams are simultaneously irradiated onto the semiconductor, and a difference between diverging angles of the plurality of laser beams are corrected.