Thin film semiconductor device, polycrystalline semiconductor thin film production and process and production apparatus

A process for producing an image display device including a thin film semiconductor device comprising growing semiconductor crystal grains in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and irradiating it on said semiconductor film wherein the thin film semiconductor devices includes:

• the semiconductor film whose semiconductor crystal grains are grown in the transverse direction,
• a gate electrode formed on the semiconductor film through a gate insulating film,
• first charge transmitting and receiving means and second charge transmitting and receiving means formed in the semiconductor film at a predetermined interval therebetween, and
• a channel region formed in the semiconductor film between the first and second charge transmitting and receiving means, wherein a main orientation of the semiconductor film constituting the channel region is {110} with respect to a main surface of an insulating substrate or the gate insulating film.

A process for producing an image display device including a thin film semiconductor device comprising growing semiconductor crystal grains in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and irradiating it on said semiconductor film, such that melting of the semiconductor film and growth of the semiconductor crystal grains are controlled by the same pulsed laser beam, wherein the thin film semiconductor devices includes:

• the semiconductor film whose semiconductor crystal grains are grown in the transverse direction,
• a gate electrode formed on the semiconductor film through a gate insulating film,
• first charge transmitting and receiving means and second charge transmitting and receiving means formed in the semiconductor film at a predetermined interval therebetween, and
• a channel region formed in the semiconductor film between the first and second charge transmitting and receiving means, wherein the semiconductor film is essentially comprised of crystal grains having an axis in a longitudinal direction of 45° or less with respect to a direction for connecting the first and second charge transmitting and receiving means in the channel region.

A process for producing an image display device including a thin film semiconductor device comprising growing semiconductor crystal grains in a transverse direction in a semiconductor film by modulating a continuous wave laser into a pulsed laser beam and irradiating it on said semiconductor film wherein the thin film semiconductor devices includes:

• the semiconductor film whose semiconductor crystal grains are grown in the transverse direction,
• a gate electrode formed on the semiconductor film through a gate insulating film,
• first charge transmitting and receiving means and second charge transmitting and receiving means formed in the semiconductor film at a predetermined interval therebetween, and
• a channel region formed in the semiconductor film between the first and second charge transmitting and receiving means, wherein the semiconductor film is comprised of a small inclination grain boundary having an angle of 75° or less with respect to a direction for connecting the first and second charge transmitting and receiving means.