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US 7,115,453 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsOsamu Nakamura, Masayuki Kajiwara, Shunpei Yamazaki, Hideto Ohnuma
Life of this patent
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Abstract
Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.
Claims70
A method of manufacturing a semiconductor device comprising:
- forming a first semiconductor film comprising an amorphous silicon over a substrate having an insulating surface;
- adding a material comprising a metal for promoting crystallization to the first semiconductor film;
- performing a first heating process to the first semiconductor film, thereby forming the first semiconductor film having a crystal structure;
- forming a barrier layer on a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film containing a rare gas element on the barrier layer by plasma CVD method or high-frequency sputtering method;
- performing gettering through a second heating process, thereby moving the metal to the second semiconductor film;
- and
- removing the second semiconductor film.
5 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first semiconductor film comprising an amorphous silicon over a substrate having an insulating surface;
- adding a material comprising a metal for promoting crystallization to the first semiconductor film;
- performing a first heating process to the first semiconductor film, thereby forming the first semiconductor film having a crystal structure;
- irradiating the first semiconductor film having the crystal structure with laser light;
- forming a barrier layer on a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film containing a rare gas element on the barrier layer by plasma CVD method or high-frequency sputtering method;
- performing gettering through a second heating process, thereby moving the metal to the second semiconductor film;
- and
- removing the second semiconductor film.
6 more elements
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor film comprising amorphous silicon with a metal containing material for promoting crystallization;
- heating the semiconductor film and the metal to crystallize the semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a barrier layer on a surface of the crystallized semiconductor film;
- forming a semiconductor film containing a rare gas element on the barrier layer;
- removing the metal from the crystallized semiconductor film by gettering;
- and
- removing the semiconductor film containing the rare gas element.
5 more elements
A method of manufacturing a semiconductor device comprising:
- providing a first semiconductor film comprising amorphous silicon with a metal containing a metal for promoting crystallization;
- heating the first semiconductor film and the metal to crystallize the first semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a second semiconductor film containing a rare gas element on the crystallized semiconductor film;
- performing gettering by heating the crystallized semiconductor film and the second semiconductor film;
- and
- removing the second semiconductor film.
4 more elements
A method of manufacturing a semiconductor device comprising:
- providing a first semiconductor film comprising amorphous silicon with a metal containing a metal for promoting crystallization;
- heating the first semiconductor film and the metal to crystallize the first semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a barrier layer on a surface of the crystallized semiconductor film;
- forming a second semiconductor film containing a rare gas element on the barrier layer;
- performing gettering by heating the crystallized semiconductor film, the barrier layer, and the second semiconductor film;
- and
- removing the second semiconductor film.
5 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first semiconductor film comprising an amorphous silicon over a substrate having an insulating surface;
- adding a material comprising a metal for promoting crystallization to the first semiconductor film;
- performing a first heating process to the first semiconductor film, thereby forming the first semiconductor film having a crystal structure;
- forming a barrier layer on a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film containing a rare gas element on the barrier layer by plasma CVD method or high-frequency sputtering method;
- performing gettering through a second heating process, thereby moving the metal to the second semiconductor film;
- removing the second semiconductor film;
- patterning the first semiconductor film having the crystal structure to form at least one semiconductor island;
- forming a gate insulating film over the semiconductor island;
- and
- forming a gate electrode over the semiconductor island with the gate insulating film interposed therebetween.
8 more elements
A method of manufacturing a semiconductor device comprising:
- forming a first semiconductor film comprising an amorphous silicon over a substrate having an insulating surface;
- adding a material comprising a metal for promoting crystallization to the first semiconductor film;
- performing a first heating process to the first semiconductor film, thereby forming the first semiconductor film having a crystal structure;
- irradiating the first semiconductor film having the crystal structure with laser light;
- forming a barrier layer on a surface of the first semiconductor film having the crystal structure;
- forming a second semiconductor film containing rare gas element on the barrier layer by plasma CVD method or high-frequency sputtering method;
- performing gettering through a second heating process, thereby moving the metal to the second semiconductor film;
- removing the second semiconductor film;
- patterning the first semiconductor film having the crystal structure to form at least one semiconductor island;
- forming a gate insulating film over the semiconductor island;
- and
- forming a gate electrode over the semiconductor island with the gate insulating film interposed therebetween.
9 more elements
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor film comprising amorphous silicon with a metal containing material for promoting crystallization;
- heating the semiconductor film and the metal to crystallize the semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a barrier layer on a surface of the crystallized semiconductor film;
- forming a semiconductor film containing a rare gas element on the barrier layer;
- and
- removing the metal from the crystallized semiconductor film by gettering;
- removing the semiconductor film containing the rare gas element;
- patterning the crystallized semiconductor film to form at least one semiconductor island;
- forming a gate insulating film over the semiconductor island;
- and
- forming a gate electrode over the semiconductor island with the gate insulating film interposed therebetween.
9 more elements
A method of manufacturing a semiconductor device comprising:
- providing a first semiconductor film comprising amorphous silicon with a metal containing a metal for promoting crystallization;
- heating the first semiconductor film and the metal to crystallize the first semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a second semiconductor film containing a rare gas element on the crystallized semiconductor film;
- performing gettering by heating the crystallized semiconductor film and the second semiconductor film;
- removing the second semiconductor film;
- patterning the crystallized semiconductor film to form at least one semiconductor island;
- forming a gate insulating film over the semiconductor island;
- and
- forming a gate electrode over the semiconductor island with the gate insulating film interposed therebetween.
7 more elements
A method of manufacturing a semiconductor device comprising:
- providing a first semiconductor film comprising amorphous silicon with a metal containing a metal for promoting crystallization;
- heating the first semiconductor film and the metal to crystallize the first semiconductor film;
- irradiating the crystallized semiconductor film with light so that the crystallized semiconductor film is melted at least partly;
- forming a barrier layer on a surface of the crystallized semiconductor film;
- forming a second semiconductor film containing a rare gas element on the barrier layer;
- performing gettering by heating the crystallized semiconductor film, the barrier layer, and the second semiconductor film;
- removing the second semiconductor film;
- patterning the crystallized semiconductor film to form at least one semiconductor island;
- forming a gate insulating film over the semiconductor island;
- and
- forming a gate electrode over the semiconductor island with the gate insulating film interposed therebetween.
8 more elements
Dependencies are inferred from the claim text.