Method of making semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideto Ohnuma, Tamae Takano, Hisashi Ohtani
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Abstract
To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted selectively to the crystalline silicon film having the catalyst element whereby a portion of the silicon film implanted with phosphorus is made amorphous, and when a thermal annealing treatment is performed and the silicon film is heated, the catalyst element is moved to an amorphous portion implanted with phosphorus having large getting capacity by which the concentration of the catalyst element in the silicon film is lowered and a semiconductor device is fabricated by using the silicon film.
Claims76
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a crystallization promoting material to said semiconductor film;
- crystallizing said semiconductor film;
- irradiating said crystallized semiconductor film with a laser beam;
- forming a first mask on said crystallized semiconductor film, said first mask covering a first portion of said crystallized semiconductor film;
- adding an element to a selected portion of said crystallized semiconductor film by using said first mask;
- performing a heat treatment for gettering;
- removing said first mask;
- forming a second mask on said crystallized semiconductor film;
- and
- etching said selected portion of said crystallized semiconductor film and a part of said first portion of said crystallized semiconductor film by using said second mask to form an active layer.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a crystallization promoting material to said semiconductor film;
- crystallizing said semiconductor film;
- forming a first mask on said crystallized semiconductor film, said first mask covering a first portion of said crystallized semiconductor film;
- after forming said first mask, irradiating said crystallized semiconductor film with a laser beam;
- adding an element to a selected portion of said crystallized semiconductor film by using said first mask;
- performing a heat treatment for gettering;
- removing said first mask;
- and
- etching said selected portion of said crystallized semiconductor film and a part of said first portion of said crystallized semiconductor film by using a second mask to form an active layer.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a crystallization promoting material to said semiconductor film;
- crystallizing said semiconductor film;
- irradiating said crystalline semiconductor film with a laser beam;
- adding an element to a selected portion of said crystalline semiconductor film by using a first mask covering a first portion of said crystalline semiconductor film;
- performing a heat treatment for gettering so that said crystallization promoting material is diffused to said selected portion;
- and
- patterning said crystalline semiconductor film using a second mask in order to form a semiconductor island,
- wherein said semiconductor island does not include said selected portion and a part of said first portion, and
- wherein a width of the second mask is smaller than that of the first mask.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a crystallization promoting material to said semiconductor film;
- crystallizing said semiconductor film;
- irradiating said crystallized semiconductor film with a laser beam, thereby dispersing said crystallization promoting material therein;
- forming a first mask on said crystallized semiconductor film, said first mask covering a first portion of said crystallized semiconductor film;
- adding an element to a selected portion of said crystallized semiconductor film by using said first mask;
- performing a heat treatment for gettering;
- removing said first mask;
- forming a second mask on said crystallized semiconductor film;
- and
- etching said selected portion of said crystallized semiconductor film and a part of said first portion of said crystallized semiconductor film by using said second mask to form an active layer.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
- adding a crystallization promoting material to said semiconductor film;
- crystallizing said semiconductor film;
- forming a first mask on said crystallized semiconductor film, said first mask covering a first portion of said crystallized semiconductor film;
- after forming said first mask, irradiating said crystallized semiconductor film with a laser beam, thereby dispersing said crystallization promoting material therein;
- adding an element to a selected portion of said crystallized semiconductor film by using said first mask;
- performing a heat treatment for gettering;
- removing said first mask;
- and
- etching said selected portion of said crystallized semiconductor film and a part of said first portion of said crystallized semiconductor film by using a second mask to form an active layer.
Dependencies are inferred from the claim text.