SO2 treatment of oxidized CuO for copper sulfide formation of memory element growth
AssigneeAdvanced Micro Devices, Inc.
InventorsChristopher F. Lyons, Ramkumar Subramanian, Sergey D. Lopatin, James J. Xie, Angela T. Hui
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Abstract
Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve oxidizing a portion of a copper containing electrode to form a copper oxide layer; contacting the copper oxide layer with at least one of a sulfur containing gas or plasma to form a CuS layer; forming an organic semiconductor over the CuS layer; and forming an electrode over the organic semiconductor. Such devices containing the memory cells are characterized by light weight and robust reliability.
Claims20
A method of making a memory cell, comprising:
- providing a first electrode comprising at least copper;
- oxidizing a portion of the first electrode to form a copper oxide layer on the first electrode;
- contacting the copper oxide layer with at least one of a sulfur containing gas and a sulfur containing plasma to convert at least a substantial portion of the copper oxide layer to a CuS layer;
- forming an organic semiconductor over the CuS layer;
- and
- forming a second electrode over the organic semiconductor.
A method of making a memory cell, comprising:
- providing a first electrode comprising at least 50% by weight copper;
- contacting the first electrode with an oxidizing compound to form a copper oxide layer on the first electrode;
- contacting the copper oxide layer with at least one of a sulfur containing gas and a sulfur containing plasma to convert at least a substantial portion of the copper oxide layer to a CuS layer;
- forming an organic semiconductor over the CuS layer;
- and
- forming a second electrode over the organic semiconductor.
A method of making a memory cell, comprising:
- providing a first electrode comprising at least copper;
- oxidizing a portion of the first electrode to form a copper oxide layer on the first electrode;
- contacting the copper oxide layer with at least one of a sulfur dioxide containing gas and a sulfur dioxide containing plasma to convert at least a substantial portion of the copper oxide layer to a CuS layer;
- forming an organic semiconductor comprising a conjugated organic polymer over the CuS layer;
- and
- forming a second electrode over the organic semiconductor.
Dependencies are inferred from the claim text.