Method for precisely forming light emitting layers in a semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming at least first and second source signal lines extending in a first direction over a surface of a substrate, wherein the first source signal line is connected to a plurality of thin film transistors and the second source signal line is connected to a plurality of thin film transistors;
• forming at least a first stripe shape bank over the first source signal line and a second stripe shape bank over the second source signal line, wherein the first and second stripe shape banks extend in the first direction;
• applying a solution comprising an organic material between the first and second stripe shape banks, wherein the solution is continuously applied onto at least two pixels extending along the first direction using a dispenser;
• heating the solution for forming a light emitting layer;
• directing the surface of the substrate downward;
• and
• depositing a material toward the surface directed downward in order to form a film adjacent to the light emitting layer.

A method for manufacturing a semiconductor device, comprising:

• forming a plurality of source signal lines extending in a first direction and a plurality of gate signal lines extending in a second direction perpendicular to the first direction over a substrate;
• forming a bank over the plurality of source signal lines and the plurality of gate signal lines,
• wherein the bank is extending in the first and second directions, and
• wherein a plurality of regions arranged in a matrix form are separated by the bank;
• applying a solution comprising an organic material in the plurality of regions,
• wherein the solution is continuously applied onto at least two pixels in one of the plurality of regions.

A method for manufacturing a semiconductor device, comprising:

• forming a plurality of source signal lines extending in a first direction and a plurality of gate signal lines extending in a second direction perpendicular to the first direction over a surface of a substrate;
• forming a bank over the plurality of source signal lines and the plurality of gate signal lines,
• wherein the bank is extending in the first and second directions, and
• wherein a plurality of regions arranged in a matrix form are separated by the bank;
• applying a solution comprising an organic material in the plurality of regions,
• wherein the solution is continuously applied onto at least two pixels in one of the plurality of regions,
• heating the solution for forming a plurality of light emitting layers;
• directing the surface of the substrate downward;
• and
• depositing a material toward the surface directed downward in order to form a film adjacent to the light emitting layer.

A method for manufacturing a semiconductor device, comprising:

• forming at least first and second signal lines extending in a first direction over a substrate, wherein the first signal line is connected to a plurality of thin film transistors and the second signal line is connected to a plurality of thin film transistors;
• forming at least a first stripe shape bank over the first signal line and a second stripe shape bank over the second signal line, wherein the first and second stripe shape banks extend in the first direction;
• and
• applying a solution comprising an organic material onto at least two pixels extending along the first direction between the first and second stripe shape banks continuously using a dispenser.

A method for manufacturing a semiconductor device, comprising:

• forming at least first and second signal lines extending in a first direction over a surface of a substrate, wherein the first signal line is connected to a plurality of thin film transistors and the second signal line is connected to a plurality of thin film transistors;
• forming at least a first stripe shape bank over the first signal line and a second stripe shape bank over the second signal line, wherein the first and second stripe shape banks extend in the first direction;
• applying a solution comprising an organic material between the first and second stripe shape banks, wherein the solution is continuously applied onto at least two pixels extending along the first direction continuously using a dispenser;
• heating the solution for forming a light emitting layer;
• directing the surface of the substrate downward;
• and
• depositing a material toward the surface directed downward in order to form a film adjacent to the light emitting layer.

A method for manufacturing a semiconductor device, comprising:

• forming at least first, second, third and fourth source signal lines extending in a first direction over a substrate, wherein each of the first second, third and fourth source signal line is connected to a plurality of thin film transistors;
• forming at least first second, third and fourth stripe shape banks each over one of the first second, third and fourth source signal line, wherein the first second, third and fourth stripe shape banks extend in the first direction;
• applying a first solution comprising a material emitting red light when a voltage being applied onto at least two pixels extending along the first direction between the first and second stripe shape banks continuously using a dispenser,
• applying a second solution comprising a material emitting green light when a voltage being applied onto at least two pixels extending along the first direction between the second and third stripe shape banks continuously using a dispenser, and
• applying a third solution comprising a material emitting blue light when a voltage being applied onto at least two pixels extending along the first direction between the third and fourth stripe shape banks continuously using a dispenser.