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US 7,115,344 B2Granted
Photomask and pattern forming method employing the same
AssigneeRenesas Technology Corp.
InventorsNorio Hasegawa, Fumio Murai, Katsuya Hayano
Life of this patent
Estimating the term…
Abstract
A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.
Claims19
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a phase shifting mask including (a) an element forming area having a semitransparent phase shifting film, and (b) a light shielding area provided at a peripheral edge of said element forming area and serving to make an intensity of light having passed through said light shielding area smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed photoresist film, and said light shielding area further including a target pattern for mask aligning;
- and
- transmitting, with a projection exposure optical system, a pattern formed element forming area of said phase shifting mask onto said photoresist film.
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a phase shifting mask including (a) an element forming area having a first semitransparent phase shifting film having a transmittance with respect to exposure light not higher than 25%, and (b) a light shielding area provided at a peripheral edge of said element forming area and serving to make an intensity of light having passed through said light shielding area smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed photoresist film, and said light shielding area further including a target pattern for mask aligning;
- preparing a semiconductor substrate at which said photoresist film to be exposed is formed;
- and
- transmitting, with a projection exposure optical system, a pattern formed element forming area of said phase shifting mask onto said photoresist film.
1 more element
A method of manufacturing a semiconductor device, comprising the steps of:
- preparing a transparent phase shifting mask including (a) a hole formation semitransparent phase shifting film formed at an element forming area on a photomask substrate, and (b) a light shielding area provided at a peripheral edge portion of said element forming area and serving to make an intensity of light having passed through said light shielding area smaller than an intensity of light having passed through said semitransparent phase shifting film, as measured on a to-be-exposed photoresist film, said light shielding area further including a target pattern for mask aligning;
- and
- exposing, with a projection exposure optical system, a hole pattern formed on said element forming area of said phase shifting mask onto said photoresist film.
Dependencies are inferred from the claim text.