Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
AssigneeHoya Corporation
InventorsYuuki Shiota, Osamu Nozawa, Ryo Ohkubo, Hideaki Mitsui
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AssigneeHoya Corporation
InventorsYuuki Shiota, Osamu Nozawa, Ryo Ohkubo, Hideaki Mitsui
Estimating the term…
A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprises a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, and a phase shifter film for forming the phase shifter portion. The halftone phase shift mask has an optical characteristic such that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby maintaining and improving an excellent contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed. The phase shifter film comprises a film containing silicon, oxygen, and nitrogen as main components and an etching stopper film formed between the film and transparent substrate.
A halftone phase shift mask blank for use in manufacturing a halftone phase shift mask comprising a transparent substrate, a light transmitting portion formed on the substrate for transmitting an exposure light beam, a phase shifter portion formed on the substrate for transmitting a part of the exposure light beam as a transmitted light beam and for shifting a phase of the transmitted light beam by a predetermined amount, the halftone phase shift mask being designed so that light beams passing through the light transmitting portion and through the phase shifter portion cancel each other in the vicinity of a boundary portion therebetween, thereby keeping a predetermined contrast at a boundary portion of an exposure pattern to be transferred onto the surface of an object to be exposed, wherein:
A pattern forming method of forming a pattern at least including a first layer which can be processed by dry etching using a fluorine-based gas and a second layer which can be processed by dry etching using a chlorine-based gas and which is resistant against the fluorine-based gas, the first and the second layers being not restricted in vertical relationship, the dry etching of the first layer using the fluorine-based gas and the dry etching of the second layer using the chlorine-based gas being successively carried out in the order of lamination, wherein:
Dependencies are inferred from the claim text.