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AssigneeHitachi Global Storage Technologies Japan, Ltd.
InventorsTomoo Yamamoto, Ichiro Tamai, Akira Ishikawa
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A magnetic recording medium which comprises a substrate, an orientation control layer formed directly thereon, and a Co alloy magnetic layer formed thereon directly or indirectly with a Cr underlayer or Cr alloy underlayer interposed between them, the orientation control layer having an L10 crystal structure, L21 crystal structure, fcc crystal structure, or B2 (CsCl) crystal structure containing B, owing to this construction, has a high coercive force and a low noise level and is only slightly vulnerable to thermal fluctuation. A magnetic storage device having a magnetic recording medium, a driver to turn said magnetic recording medium in the recording direction, a magnetic head including a recording element and a read-back element, means to move the magnetic head relative to the magnetic recording medium, and a record-read signal processing means to perform waveform processing on input signals to and output signals from the magnetic head, uses this magnetic recording medium and has a magnetoresistive effect read-back element in its magnetic head. This magnetic storage device has a recording density in excess of 3 Gbit/in2.
A magnetic recording medium which comprises a substrate, an orientation control layer formed thereon, a Co alloy magnetic layer formed above the orientation control layer, and a Cr underlayer or Cr alloy underlayer formed between the orientation control layer and the Co alloy magnetic layer, said orientation control layer containing at least Ti in an amount not less than 35 at. % and not more than 65 at. % and Al in an amount not less than 35 at. % and not more than 65 at. %.
A magnetic recording medium which comprises a substrate, an orientation control layer formed thereon, and a Co alloy magnetic layer formed thereon with a Cr underlayer or Cr alloy underlayer interposed between them, said orientation control layer containing at least one element selected from group A (consisting of Ni and Co) in an amount of from 30 at. % to 60 at. %, Al in an amount from 20 at. % to 30 at. %, and one element selected from group B (consisting of Ti and Zr) in an amount from 20 at. % to 30 at. %.
A magnetic recording medium which comprises a substrate, an orientation control layer formed thereon, and a Co alloy magnetic layer formed thereon with an underlayer interposed between them, said orientation control layer having the B2 (CsCl) crystal structure incorporated with at least B,
A magnetic recording medium which comprises a substrate, an orientation control layer formed thereon, and a Co alloy magnetic layer formed thereon with a Cr underlayer or Cr alloy underlayer interposed between them, said orientation control layer having the B2 (CsCl) crystal structure incorporated with at least B, and an intermediate layer between the magnetic layer and the underlayer, said intermediate layer being made of a material containing Co and not less than 25 at. % Cr.
Dependencies are inferred from the claim text.