Method of horizontally growing carbon nanotubes and device having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSoo-hwan Jeong, Wan-jun Park, In-kyeong Yoo, Ju-hye Ko
Life of this patent
Estimating the term…
Abstract
Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.
Claims15
A method of growing carbon nanotubes, comprising:
- providing a substrate with a top surface;
- depositing an aluminum layer with a top surface, a bottom surface and side surfaces on the top surface of the substrate;
- forming an insulating layer on the top surface of the aluminum layer;
- patterning the insulating layer and the aluminum layer on the substrate so as to expose a side surface of the aluminum layer and a portion of the top surface of the substrate;
- forming a plurality of holes in the exposed side surface of the aluminum layer to a predetermined depth into the exposed side surface, wherein the plurality of holes have cross-sectional areas, and have lengths from bottoms of the holes at the deepest sideways portions of the holes to the exposed side surfaces of the aluminum layer;
- depositing a catalyst metal layer on the bottoms of the holes;
- and
- growing the carbon nanotubes from the catalyst metal layer from the bottoms of the holes out of the exposed side surfaces of the aluminum layer.
A method of growing carbon nanotubes, comprising:
- providing a substrate;
- forming an aluminum layer on a top surface of the substrate;
- forming an insulating layer on a top surface of the aluminum layer, wherein the substrate, the aluminum layer and the insulating layer are stacked;
- removing a portion of the insulating layer and a portion of the aluminum layer beneath the removed portion of the insulating layer to expose the top surface of the substrate, a first side portion of the insulating layer and a first side portion of the aluminum layer, wherein these first side portions are co-planar;
- forming a plurality of holes with length directions formed in a sideways direction into the first side portion of the aluminum layer to a predetermined depth;
- depositing a catalyst layer within the plurality of holes;
- and
- growing carbon nanotubes from the catalyst layer.
Dependencies are inferred from the claim text.